Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

Wang, Tz-Wun; Kao, Yu Chen; Hung, Sheng-Hsi; Wen, Yong-Hwa; Yang, Tung‐Han; Li, Siyi; Chen, Ke-Horng; Zheng, Kuo-Lin; Lin, Ying-Hsi; Lin, Shian-Ru; Tsai, Tsung-Yen

doi:10.1109/jssc.2022.3200381

Cited by 20 publications

(2 citation statements)

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“…The dead time can be further increased by an external capacitor. Further dead time circuits are realized in [14,[22][23][24].…”

Section: Dead Time Controlmentioning

confidence: 99%

“…EPC's portfolio also includes standard monolithic low-voltage half-bridges [4], and many more are published in different voltage classes (see review in [9]) or also by the authors [10,11]. Furthermore, there is some research in the area of half-bridge driver integration including a level shifter, for example, in [12][13][14][15], and many more without level shifters. Also, a first control in GaN of the authors in [16] was shown for a half-bridge power stage.…”

Section: Introductionmentioning

confidence: 99%

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Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

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In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact.

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“…The dead time can be further increased by an external capacitor. Further dead time circuits are realized in [14,[22][23][24].…”

Section: Dead Time Controlmentioning

confidence: 99%