Monolithic III‐V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy

Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.; Zhao, Xiang; Yu, Ki Jun; Wang, Ning C.; Rockett, Angus; Rogers, John A.; Lyding, Joseph W.; Pop, Eric; Li, Xiuling

doi:10.1002/adma.201305909

Cited by 92 publications

(63 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Noncovalent epitaxy, the so-called van der Waals (vdW) epitaxy, [15][16][17][18] has the ability to produce single-crystalline semiconductor nanostructures with an abrupt clean heterointerface and suppressed threading dislocation density, even for highly latticemismatched heteroepitaxial systems. 19 Accordingly, it is well suited for fabricating high-quality epitaxial semiconductor/hBN heterostructures for diverse device applications.…”

Section: Introductionmentioning

confidence: 99%

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Hong

Kim

et al. 2014

NPG Asia Mater

View full text Add to dashboard Cite

Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shape-and morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for an architectured semiconductor integration on the 2-d layered materials. The vdW surface feature of the 2-d nanomaterials, because of the surface free of dangling bonds, typically results in low-density random nucleation-growth in the vdW epitaxy. The difficulty in controlling the nucleation sites was resolved by artificially formed atomic ledges prepared on hBN substrates, which promoted the preferential vdW nucleation-growth of ZnO specifically along the designed ledges. Electron microscopy revealed crystallographically domain-aligned incommensurate vdW heteroepitaxial relationships, even though ZnO/hBN is highly latticemismatched. First-principles theoretical calculations confirmed the weakly bound, noncovalent binding feature of the ZnO/hBN heterostructure. Electrical characterizations of the ZnO nanowall networks grown on hBN revealed the excellent electrical insulation properties of hBN substrates. An ultraviolet photoconductor device using the vdW epitaxial ZnO nanowall networks/ hBN heterostructure was further demonstrated as an example of hBN substrate-based device applications. The architectured heteroepitaxy of semiconductors on hBN is thus expected to create many other device arrays that can be integrated on a piece of substrate with good electrical insulation for use in individual device operation.

show abstract

Section: Introductionmentioning

confidence: 99%

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Hong

Kim

et al. 2014

NPG Asia Mater

View full text Add to dashboard Cite

show abstract

“…I n the past decade, due to intriguing physical properties, one-dimensional (1D) semiconductor nanowires (NWs) have attracted attention as fundamental building blocks for next-generation electronics, optoelectronics, photovoltaics and so on [1][2][3][4][5][6][7][8] . Although significant progress has been made in the manipulation of NW nucleation and composition in both binary and ternary systems 9,10 , it is still challenging to control the morphology and size of NWs on length scales ranging from the atomic upwards, particularly for the technologically important III-Sb NWs.…”

mentioning

confidence: 99%

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

et al. 2014

View full text Add to dashboard Cite

Although various device structures based on GaSb nanowires have been realized, further performance enhancement suffers from uncontrolled radial growth during the nanowire synthesis, resulting in non-uniform and tapered nanowires with diameters larger than few tens of nanometres. Here we report the use of sulfur surfactant in chemical vapour deposition to achieve very thin and uniform GaSb nanowires with diameters down to 20 nm. In contrast to surfactant effects typically employed in the liquid phase and thin-film technologies, the sulfur atoms contribute to form stable S-Sb bonds on the as-grown nanowire surface, effectively stabilizing sidewalls and minimizing unintentional radial nanowire growth. When configured into transistors, these devices exhibit impressive electrical properties with the peak hole mobility of B200 cm 2 V À 1 s À 1 , better than any mobility value reported for a GaSb nanowire device to date. These factors indicate the effectiveness of this surfactant-assisted growth for high-performance small-diameter GaSb nanowires.

show abstract

“…And he experimentally concluded that enhanced In concentration could result in higher photocurrent up to 8.6% of illuminating light conversion. However, the power conversion efficiency (PCE) of InGaAs/InAs heterostructured nanowire array made by Parsion K. Mohseni can reach up to 2.51% [99] and solar cells made by InAs/p-Si heterojunction nanowire had a PCE of 1.4% [100]. In addition, Mallorqui further concluded that density and length reduction of nanowires could yield better performance [100].…”

Section: Characterization Of Nanowires For Photovoltaicsmentioning

confidence: 99%