Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Moench, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, R.; Ambacher, O.

doi:10.1002/pssa.202170014

Cited by 5 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[9][10][11][12][13] Moreover, although AlGaN/ GaN HEMT is the most mature technology, which demonstrated outstanding power performances in the microwave range, the device downscaling for higher frequency of operation generally results in a reduced breakdown voltage degrading the overall device performances. [14][15][16][17][18] In this work, we demonstrate the possibility to achieve a high vertical buffer breakdown field in a submicrometer-thick epistack. The high breakdown field is understood to originate from the use of Al-rich AlGaN buffer layers and a high-quality AlN nucleation layer (NL).…”

Section: Introductionmentioning

confidence: 89%

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Carneiro

Rennesson²,

Tamariz

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Submicrometer‐thick AlGaN/GaN high‐electron‐mobility transistor (HEMT) epilayers grown on silicon substrate with a state‐of‐the art vertical buffer breakdown field as high as 6 MV cm−1 enabling a high transistor breakdown voltage of 250 V for short gate‐to‐drain distances despite such a thin structure are reported. HEMTs with a gate length of 100 nm exhibit good DC characteristics with a low drain‐induced barrier, going as low as 100 mV V−1 for a VDS of 30 V. Breakdown voltages of each epilayer from the decomposed heterostructure reveals that the outstanding breakdown strength is attributed to the insertion of Al‐rich AlGaN in the buffer layers combined with an optimized AlN nucleation layer. As a result, large signal measurements at 10 GHz could be reliably achieved up to VDS = 35 V despite the use of a 100 nm gate length. These results demonstrate the potential of submicrometer‐thick buffer GaN‐on‐Si heterostructures for high‐frequency applications.

show abstract

Section: Introductionmentioning

confidence: 89%

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Carneiro

Rennesson²,

Tamariz

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Liu

Zhang

et al. 2023

Journal of Luminescence

View full text Add to dashboard Cite

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

Moench

Basler

Reiner

et al. 2023

e-Prime - Advances in Electrical Engineering, Electronics and E

View full text Add to dashboard Cite

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssa.202000404.

Cited by 5 publications

References 31 publications

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

Contact Info

Product

Resources

About