Monolithic Integrated InGaAs/InAlAs WDM-APDs With Partially Depleted Absorption Region and Evanescently Coupled Waveguide Structure

Zhao, Yanli; Tu, Junjie; Li, Qian; Tian, Ye

doi:10.1109/jlt.2020.2987156

Cited by 7 publications

(1 citation statement)

References 23 publications

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“…Promising single-photon detection performance of InGaAs/indium phosphide (InP) SPADs has been reported with the implementation of selective doping techniques (Zinc diffusion) along with the introduction of the floating guard rings in a planar structure to suppress edge breakdown and dark noise simultaneously [7][8][9][10][11]. In addition to InGaAs/InP SPADs, the mesa-type InGaAs/ indium aluminum arsenide (InAlAs) SPAD is another potential candidate with the features of lower process temperature, smaller footprint, and easier integration with the photonic devices [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

Zhang¹,

Xu²,

Zhang³

et al. 2023

Quantum Sci. Technol.

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We have demonstrated the integrated InGaAs/InAlAs single-photon avalanche diodes (SPAD) with Si waveguides and grating couplers on the Silicon-on-insulator (SOI) substrate. A vertical coupling scheme is adopted which allows the use of a thick bonding interlayer for high yield. SU-8 is selected to be the adhesion layer with a low transmission loss, low volumetric shrinkage, and a low curing temperature. In addition, both hybrid and heterogeneous integration schemes are realized which are compatible with the current multi-project wafer (MPW) process. Extensive performance characterization is carried out while the results are compared. Our hybrid integrated SPAD exhibits high photon detection efficiency (PDE) of ~21% and a relatively low dark count rate (DCR) of 8.6×105 Hz, which are among the best performance reported for InGaAs/InAlAs SPADs while the heterogeneous integrated SPAD shows a decent PDE of 6% with a DCR of 2×107 Hz. Combined with the inherent wide applicability of the bonding using SU-8 layer, this photonic integration provides a promising solution for large-scale quantum information with various material systems.quantum information with various material systems.

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