Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter

Jiang, W. L.; Murray, S. K.; Zaman, Mohammad Shawkat; Vleeschouwer, Herbert De; Roig, J.; Moens, P.; Trescases, Olivier

doi:10.1109/apec42165.2021.9487430

Cited by 26 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further details to the design and a schematic of the HS driver can be found in [16]. The design of the level shifter is simple, although there are already more complex ones in GaN [13,15,[19][20][21].…”

Section: Gate Driver and Level Shiftermentioning

confidence: 99%

“…EPC's portfolio also includes standard monolithic low-voltage half-bridges [4], and many more are published in different voltage classes (see review in [9]) or also by the authors [10,11]. Furthermore, there is some research in the area of half-bridge driver integration including a level shifter, for example, in [12][13][14][15], and many more without level shifters. Also, a first control in GaN of the authors in [16] was shown for a half-bridge power stage.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

View full text Add to dashboard Cite

In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact.

show abstract

Section: Gate Driver and Level Shiftermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

View full text Add to dashboard Cite

show abstract

“…5: Q6-Q9, D2, C1) ensures fast turn-on and turn-off switching. GaN-based gate drivers have already been described in many publications [39][40][41][42][43][44][45][46][47][48][49][50][51][52]. There are several approaches to realize the control unit, e.g.…”

Section: B Controlmentioning

confidence: 99%

GaN Active Rectifier Diode

Basler

Reiner

Moench

et al. 2022

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

Active or synchronous rectification is used today to further increase the efficiency of mass-market power supplies by eliminating the turn-on voltage of rectifier diodes, thus reducing conduction losses. However, the active rectification is usually realized by two devices: a power MOSFET and a control circuit to imitate an ideal diode behavior. This paper presents a GaN active rectifier diode consisting of a 600 V power transistor, a control circuit with gate driver, and a supply generation, all monolithically realized in a GaN power integrated circuit (IC). This enables a true two-terminal device that can directly replace a rectifier diode. In order to evaluate the proposed conduction loss reduction by replacing a rectifier diode by an active diode, the theoretical limits at circuit level and at semiconductor level are analyzed. The GaN active rectifier diode is demonstrated in a half-wave rectification (110/230 VAC, 50/60 Hz) up to a forward current of 6 A. A single-device realization of low-loss GaN active rectifier diodes is more cost-efficient than a multi-chip or package-integrated solution.

show abstract

“…The parallel connection of a sense transistor (sense-FET, also called sense-HEMT or sense-GaN for GaN HEMTs [ 30 ]) does not require the critical loop to be cut, and can be also monolithically integrated with the GaN IC. GaN-based sense-FET ICs have been already demonstrated monolithically [ 31 , 32 , 33 , 34 , 35 , 36 , 37 ] and also by external wiring of several GaN devices [ 30 , 38 ] for single discrete transistors and used in half-bridges. This work focuses only on current-mirror sensing; other current sensing methods such as shunt-sensor [ 39 , 40 , 41 , 42 , 43 ] or hall-sensor [ 44 ] integration, as well as related magnetic flux concentrators [ 45 ] or magnetic sensors [ 46 ], were also demonstrated in GaN technologies.…”

Section: Introductionmentioning

confidence: 99%

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Moench

Reiner

Basler

et al. 2023

Sensors

View full text Add to dashboard Cite

A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

show abstract

Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter

Cited by 26 publications

References 15 publications

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

GaN Active Rectifier Diode

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Contact Info

Product

Resources

About