Monolithic integration of individually addressable light-emitting diode color pixels

Chung, Kunook; Sui, Jingyang; Demory, Brandon; Teng, Chu Hsiang; Ku, Pei-Cheng

doi:10.1063/1.4978554

Cited by 55 publications

(44 citation statements)

References 24 publications

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“…5b) with other nano/microstructures 58,59 . Fourthly, the emission across the visible or the UV spectrum can be tuned by engineering the strain in an embedded active region through the control of the nanorod diameter 60 . Finally, nanolaser cavities, where the light is confined either between the top and bottom facet or within the circumference of the structure, can be constructed from high-aspect-ratio nanostructures such as the rods and tubes (Fig.…”

Section: Resultsmentioning

confidence: 99%

Displacement Talbot lithography for nano-engineering of III-nitride materials

et al. 2019

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Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

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Section: Resultsmentioning

confidence: 99%

Displacement Talbot lithography for nano-engineering of III-nitride materials

et al. 2019

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“…where E 0 is the photon energy when the strain is completely relaxed and B m depends on the piezoelectric property of the material. Equation (4) has been previously verified experimentally at three different indium compositions [21,25]. The only fitting parameter required was 1/κ, as Equation (4) is derived solely from classical solid mechanics.…”

Section: Emission Wavelengthmentioning

confidence: 94%

An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures

Sui

2020

Micromachines

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A set of empirical equations were developed to describe the optical properties of III-nitride dot-in-wire nanostructures. These equations depend only on the geometric properties of the structures, enabling the design process of a III-nitride light emitter comprised of dot-in-wire polar nanostructures, to be greatly simplified without first-principle calculations. Results from the empirical model were compared to experimental measurements and reasonably good agreements were observed. Strain relaxation was found to be the dominant effect in determining the optical properties of dot-in-wire nanostructures.

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“…Nevertheless, long-wavelength emission is difficult to achieve from GaInN/GaN multiple quantum well structures, owing to the degradation of crystalline quality and the large strain-induced piezoelectric field [17]. Recent studies have achieved different emission wavelengths from three-dimensional structures fabricated by local strain engineering [18][19][20]. Using the top-down etching method, the authors of reference [21] fabricated monolithic LEDs combining microstructure and nanostructures of GaInN/GaN, which emit distinctive blue-green-yellow light with a color rendering index (CRI) of 41.…”

Section: Introductionmentioning

confidence: 99%

Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD

Ito

Sone

et al. 2020

Nanomaterials

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Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor deposition. The non-polar GaInN/GaN structures were coaxially grown on n-core nanowires with combinations of three different diameters and pitches. To broaden the emission band in these three nanowire patterns, we varied the triethylgallium (TEG) flow rate and the growth temperature of the quantum barriers and wells, and investigated their effects on the In incorporation rate during MQS growth. At higher TEG flow rates, the growth rate of MQS and the In incorporation rate were promoted, resulting in slightly higher cathodoluminescence (CL) intensity. An enhancement up to 2–3 times of CL intensity was observed by escalating the growth temperature of the quantum barriers to 800 °C. Furthermore, decreasing the growth temperature of the quantum wells redshifted the peak wavelength without reducing the MQS quality. Under the modified growth sequence, monolithically grown nanowires with a broaden emission was achieved. Moreover, it verified that reducing the filling factor (pitch) can further promote the In incorporation probability on the nanowires. Compared with the conventional film-based quantum well LEDs, the demonstrated monolithic coaxial GaInN/GaN nanowires are promising candidates for phosphor-free white and micro light-emitting diodes (LEDs).

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Monolithic integration of individually addressable light-emitting diode color pixels

Cited by 55 publications

References 24 publications

Displacement Talbot lithography for nano-engineering of III-nitride materials

Displacement Talbot lithography for nano-engineering of III-nitride materials

An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures

Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD

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