Monolithic integration of InGaAsP heterostructure lasers and electrooptical devices

Wright, P. D.; Nelson, R. J.; Wilson, R. B.

doi:10.1109/jqe.1982.1071521

Cited by 15 publications

(6 citation statements)

References 28 publications

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“…The above-mentioned mesas are believed to account for the occasional apparent deviation of the resulting etch profile from 90 ~ . Deviation from the vertical of ~2~ ~ (i.e., 62 : 92~ ~ have been observed by others (14,15) and ourselves. Arrays of very small mesas can explain this phenomena.…”

Section: Conventional Wet Chemical Etching (Wce)--withsupporting

confidence: 61%

“…Perhaps the surface must be slightly In rich to inhibit HC1 etching, for it is well established that the In rich surfaces are more inert than the P rich ones. Regardless of the explanation, this s'light tilt does exist, but fortunately its effect on laser mirror reflectivity is small (15).…”

Section: Conventional Wet Chemical Etching (Wce)--withmentioning

confidence: 94%

“…The one mixture that does reproducibly give a planar wall across all layers, Br:methanol, provides a { l l l } A crystallographic plane, which is not compatible with simple two-mirror lasers on (100) substrates. There has been some work with Br: methanol and mask edges in the (01i-) plane, in which the etching did not limit at the 0 = 125 ~ { l l l } A plane (15). In these cases, the mask-substrate combination apparently inhibited the formation of the undersloping wall by favoring continuing undercutting.…”

Section: Galnasp/lnp Heterostructure Wall Profilesmentioning

confidence: 99%

“…Recently, there have been several important papers that addressed the topic of etching in GaInAsP/InP (13)(14)(15)(16), but still lacking are detailed procedures for obtaining a desired wall profile (such as vertical) or an understanding of how to proceed to develop such procedures for a new problem. Earlier work in GaA1As/GaAs went some distance in addressing these questions (17)(18)(19)(20) but much of the information is limited to that system.…”

mentioning

confidence: 99%

“…Armed with this information, we then proceed to focus on the important and most critical practical problem of creating smooth, planar, and vertical-etched facets in GaInAsP/InP DH configurations for laser mirrors (15,16,(21)(22)(23). In this multilayer situation, it is found to be advantageous to use multiple etching steps to control the wall profile (21,23).…”

mentioning

confidence: 99%

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On the Formation of Planar‐Etched Facets in GaInAsP / InP Double Heterostructures

Coldren¹,

Furuya²,

Miller³

1983

J. Electrochem. Soc.

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Techniques to predict and control the etched wall profile at a mask edge are developed. An understanding of the etch rate vs. substrate orientation angle is used to predict and experimentally realize desired etched wall profiles on (001) normalGaInAsP/normalInP double heterostructure (DH) wafers. The identification and utilization of crystallographic stop etch planes is key to ensuring planar and reproducible etched facets. Fabrication procedures employing wet and dry etching techniques are outlined for either isolated step‐etched vertical wall profiles or narrow groves.

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Section: Conventional Wet Chemical Etching (Wce)--withsupporting

confidence: 61%

Section: Conventional Wet Chemical Etching (Wce)--withmentioning

confidence: 94%

Section: Galnasp/lnp Heterostructure Wall Profilesmentioning

confidence: 99%