Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission

Ramdane, A.; Devaux, F.; Souli, N.; Delprat, D.; Ougazzaden, A.

doi:10.1109/2944.577388

Cited by 62 publications

(23 citation statements)

References 58 publications

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“…Therefore distributed feedback lasers, providing longitudinal single-mode emission, are in demand for reducing the spacing between each channel. To increase the data transmission rate single channel electro-absorption modulated distributed feedback lasers (EADFB) based on quantum wells (QW) are used [1]. These two-section devices consist of a DFB laser part and a modulator part.…”

Section: Introductionmentioning

confidence: 99%

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

Bimberg

Stubenrauch

Stracke

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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The unique properties of quantum dots (QDs) as gain material for semiconductor lasers result in advantageous characteristics like high temperature stability, low noise, low feedback sensitivity and low chirp. Their low internal losses make QD based devices suitable for high-speed telecommunication applications. Increase of data transmission rate by wavelength division multiplexing techniques requires temperature stable longitudinal single-mode transmitters. We present 1.3 µm index-coupled QD distributed feedback (DFB) lasers with p-doped active region showing wide temperature independent operation, high side-mode suppression ratio (> 55 dB) and quantum efficiencies up to 40%. The data rate achieved by direct modulation is exceeded by using QD electroabsorption modulators (EAMs) based on the Quantum-Confined Stark Effect. Presently we achieve a 3 dBbandwidth of 17 GHz and extinction ratios of 18 dB. Monolithic integration of both, DFB and EAM, into a single two-section device provides an inexpensive transmitter unit suitable for metropolitan area network applications. Keywords: quantum dot, electro-absorption modulator, distributed feedback laser. INTRODUCTIONIn the next years the demand on data transmission rate will exceed the intrinsic speed of directly modulated semiconductor lasers. With wavelength division multiplexing techniques the data rates can be increased by the factor of used channels. Therefore distributed feedback lasers, providing longitudinal single-mode emission, are in demand for reducing the spacing between each channel. To increase the data transmission rate single channel electro-absorption modulated distributed feedback lasers (EADFB) based on quantum wells (QW) are used [1]. These two-section devices consist of a DFB laser part and a modulator part. The DFB laser provides a constant single-mode emission and the EAM modulates the output power. These electro-absorption modulators are based on the Quantum-Confined Stark Effect (QCSE) that results in a red shift of the absorption under an applied external electric field [2]. Such devices require insensitivity to temperature variations, optical feedback and low chirp. Thus self-organized semiconductor quantum dot (QD) lasers are largely advantageous as compared to QW lasers for such applications [3,4].In this work we focus on demonstrating separately an advanced type of QD DFB laser and QD EAM modulators, which will be monolithically integrated in a following step. In the last years several groups developed QD DFB lasers for the 1.3 µm wavelength range using different technologies, e.g. metal gratings for complex-coupling and lateral gratings [5,6]. Due to the relative high losses inherent to these technologies the lasers still need two facets for lasing operation, which complicates monolithic integration. We present here an index grating fabricated by a two-step growth process, comparable to [7] and [8], for multi-section DFB lasers. QD EAMs were predicted by [9] and statically demonstrated by [10] and [11] before. We fabricated and characteriz...

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Section: Introductionmentioning

confidence: 99%

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

Bimberg

Stubenrauch

Stracke

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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“…An electroabsorptionmodulated laser (EML) can further lead to compact devices with high coupling efficiency and low packaging costs [1,2]. However, one major difficulty in fabricating monolithic integrated devices is to obtain large bandgap energy shift between the functional elements.…”

Section: Introductionmentioning

confidence: 99%

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

Zhao

Pan

Zhang

et al. 2006

Journal of Crystal Growth

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“…12 To take advantage of these electro-absorption properties in a biased monolithic device will require the fabrication of multi-contacted devices, however many of the integration approaches (butt-coupling, selected area growth, etc.,) suffer from challenging growth and/or fabrication requirements. 13 One possible way to ease such device integration lies in stacking all the structures on top of each other, sharing an identical active region (IAR) within an optical waveguide. Except the simplified device manufacturing the stacking could be utilized in fast reconfigurable multisection devices 14 where each section could play different role, i.e., either provides emission gain or variable attenuation, in overall device design depending on the external bias applied.…”

mentioning

confidence: 99%

Optical properties of hybrid quantum dot/quantum well active region based on GaAs system

Thoma

Ochalski

Hugues

et al. 2012

Journal of Applied Physics

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We experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low- and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots – quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias.

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Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission

Cited by 62 publications

References 58 publications

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

Optical properties of hybrid quantum dot/quantum well active region based on GaAs system

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