Monolithic Integration of Trench Power JFET with Schottky Diode

Abstract

A monolithic integration of trench power JFET with schottky diode is proposed and analyzed. A unit JFET cell pitch of 1.1 um can be obtained. The specific on-resistance of the device is reduced to 14.4 mΩ·mm 2 which is close to state-of-art of power MOSFET. Two approaches for the integrated schottky diodejunction barrier schottky (JBS) and planar schottky diode (PSD) --are analyzed and compared. The integrated JBS diode shows 28% and 30% reduction while the integrated PSD shows 30% and 32% reduction on forward voltage drop and reverse recovery charge respectively compared with its p-n counterpart from the same integration technology.