Monolithic integration of VCSEL and coupled cavity RCEPD for short-reach single-fiber bi-directional optical interconnects

Wei, Qi; Li, Kai; Luo, Jun-Wei; Fan, Huize; Ren, Xiaomin; Huang, Yongqing; Fei, Jia-Rui; Duan, Xiaofeng; Wang, Qi; Cai, Shiwei

doi:10.1140/epjd/e2019-100166-2

Cited by 1 publication

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Remarkably, new transceivers of the monolithic lateral integration of VCSEL with different kinds of photodetectors at 850 nm wavelength were developed by Ulm University for single-fiber full-duplex optical communications [8]- [10]. Recently, our group has originally proposed several vertical integrated optoelectronic chip pairs for short-reach single-fiber bi-directional optical interconnects based on VCSEL structure [11]- [15]. The The associate editor coordinating the review of this manuscript and approving it for publication was Baile Chen . proposed integrated chips not only can enhance the utilization efficiency of the optical fiber, and so will reduce the amount of the fibers by half, but also simplify the fabrication process and lower the package costs.…”

Section: Introductionmentioning

confidence: 99%

Experiment on VCSEL Composed of Special Structure DBRs in Integrated Optoelectronic Chip

Wei

Luo

et al. 2019

IEEE Access

Self Cite

View full text Add to dashboard Cite

In this paper, we have demonstrated the feasibility of the proposed integrated chip by the experiments on its laser part of Vertical-cavity Surface-emitting Laser (VCSEL). The success of the integrated chip depends on the special designed cavity-in DBR, and the VCSEL's resonant cavity is composed by the cavity-in DBRs. With a gold reflector on top of the original integrated chip wafer to improve the Q value of the VCSEL's resonant cavity, the VCSEL is successful to lase. Its threshold current is 3 mA, the slope efficiency is 0.84 W/A and the estimated maximum light power is 30 mW. The experiment illustrates that the cavity-in DBR is reasonable and practical and makes foundation for the realization of the integrated chip in single-fiber bi-directional optical interconnects.INDEX TERMS Vertical cavity surface emitting lasers, p-i-n diode, integrated optoelectronics, gold reflector.

show abstract

Section: Introductionmentioning

confidence: 99%