Monolithic Photoreceiver Constructed With a ZnSe MSM Photodiode and an InGaP/GaAs HBT

Chen, Ming‐Yao; Chang, Chung‐Cheng

doi:10.1109/led.2008.2005430

Cited by 2 publications

(5 citation statements)

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“…12) Figure 4 shows the spectral photoresponses of the ZnS and ZnSe MSM photodiodes. 4,5) They shows the maximal values of 0.028 and 0.08 A/W at wavelengths of 320 nm (R 320 nm ) and 440 nm (R 440 nm ), respectively. The corresponding quantum efficiency of the ZnS MSM photodiode (11%) is lower than that of the ZnSe device (22.5%).…”

Section: Resultsmentioning

confidence: 99%

“…7. 4,5) The ZnS-and ZnSe-based devices under illumination at wavelengths of 320 and 440 nm, respectively, were characterized. Two load resistors R C (17.85 k) and R E (0.51 k) were fabricated in this integrated device.…”

Section: Resultsmentioning

confidence: 99%

“…3. 4,5) The neutral near-band-edge (NBE) excitation emissions for the ZnS and ZnSe epilayers occur at 327 and 453 nm, respectively. It is found that a weak self-activated (SA) emission of the ZnS epilayer appeared in blue spectral region.…”

Section: Methodsmentioning

confidence: 99%

“…In our previous works, fabrication of a new type of monolithic integrated photodetector composed of an InGaP/GaAs heterojunction bipolar transistor (HBT) and a metal-semiconductor-metal (MSM) photodiode based on ZnS or ZnSe epilayers has been accomplished by this method. 4,5) Under illumination, the photocurrent induced from the MSM photodiode can be enhanced directly by a common-emitter amplifier circuit made of an InGaP/GaAs HBT and two load resistors on the same chip. The device did not only possess an enhanced photoresponse but also preserve a high rejection rate of WBG-based photodiode.…”

Section: Introductionmentioning

confidence: 99%

“…Figure2shows the procedure of patterned oxide growth. The photoluminescence (PL) spectrums of these epilayers measured at 10 K using the output of a pulsed quadrupled Nd:YAG laser at 266 nm are shown in Fig.3 4,5). The neutral near-band-edge (NBE) excitation emissions for the ZnS and ZnSe epilayers occur at 327 and 453 nm, respectively.…”

mentioning

confidence: 99%

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Comparison of Performance of Integrated Photodetectors Based on ZnS and ZnSe Metal–Semiconductor–Metal Photodiodes

Chen

Chang

2009

Jpn. J. Appl. Phys.

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The successful fabrication of monolithically integrated photodetectors composed of a heterojunction bipolar transistor (HBT) and a metalsemiconductor-metal (MSM) photodiode was achieved by a patterned oxide growth technique. The photoresponsivities of the ZnS and the ZnSe MSM photodiodes were 0.028 and 0.08 A/W, respectively. Comparison of the performance in terms of optical and electrical characteristics between the ZnS-and the ZnSe-based integrated photodetectors were carried out; at a bias of 5 V, the current amplification ratios were 18.2 and 20.8, respectively. The maximal measurable input optical power intensities were 273 mW for ZnS-based integrated photodetector and 94 mW for ZnSe-based integrated photodetector. This successful integration indicates the potential of the patterned oxide growth technique in the development of integrated devices based on II-VI ZnS and ZnSe compounds for short-wavelength applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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