Monolithic quantum-dot distributed feedback laser array on silicon

Wang, Yi; Chen, Siming; Yu, Ying; Zhou, Lidan; Liu, Lin; Yang, Chunchuan; Liao, Mengya; Tang, Mingchu; Liu, Zizhuo; Wu, Jiang; Li, Wei; Ross, I. M.; Seeds, A.J.; Liu, Huiyun; Yu, Siyuan

doi:10.1364/optica.5.000528

Cited by 98 publications

(59 citation statements)

References 40 publications

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“…The major challenges of heteroepitaxial growth of GaAs or InP on Si are the antiphase domains (APDs) and threading dislocations (TDs) due to the polar on non-polar and latticemismatched heteroepitaxial growth, respectively. Over the past years, however, researchers have developed methods to grow single-domain III-V materials on offcut and on-axis Si substrates successfully, especially GaP and GaAs on Si [9][10][11], which in turn has led to the successful demonstration of telecommunication wavelength lasers on GaP/Si and GaAs/Si virtual substrates [12][13][14][15][16][17][18][19]. In addition to the APD issue, the high density of TDs originating from the lattice mismatch between Si and III-V materials, 4 % and 7 % for GaAs and InP, respectively, results in a significant degradation of the laser performance due to the formation of nonradiative recombination centers [20][21].…”

Section: Introductionmentioning

confidence: 99%

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Liu

Martin

Baron

et al. 2020

J. Lightwave Technol.

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High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been demonstrated as a promising solution to realise Si-based laser sources with very low threshold current density, high output power and long lifetime, even with relatively high density of defects due to the material dissimilarities between III-Vs and Si. On the other hand, although conventional III-V quantum-well lasers grown on Si have been demonstrated after great efforts worldwide for more than 40 years, their practicality is still a great challenge because of their very high threshold current density and very short lifetime. However, the physical mechanisms behind the superior performance of silicon-based III-V quantum-dot lasers remain unclear. In this paper, we directly compare the performance of a quantum-well and a quantum-dot laser monolithically grown on on-axis Si (001) substrates, both experimentally and theoretically, under the impact of the same density of threading dislocations. A quantum-dot laser grown on a Si substrate with a high operating temperature (105 °C) has been demonstrated with a low threshold current density of 173 A/cm 2 and a high single facet output power >100 mW at room temperature, while there is no lasing operation for the quantum-well device at room temperature even at high injection levels. By using a rate equation travelling-wave model, the quantum-dot laser's superior performance compared with its quantum well-based counterpart on Si is theoretically explained in terms of the unique properties of quantum dots, i.e., efficient carrier capture and high thermal energy barriers preventing the carriers from migrating into defect states.

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Section: Introductionmentioning

confidence: 99%

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Liu

Martin

Baron

et al. 2020

J. Lightwave Technol.

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“…In addition, zero-dimensional materials-III-V quantum dots (QDs)-monolithically grown on Si platform as gain materials provide various advantages, including low lasing threshold, reduced temperature sensitivity 38 , and less sensitivity to defects, and hence have been widely investigated in past few years. Until now, high-performance III-V QD distributed feedback lasers, ridge-waveguide lasers, microring or microdisk lasers have been successfully demonstrated, all of which were epitaxially grown on Si, including off-cut (4°-6°) Si substrate 38,39 , patterned on-axis Si (001) [40][41][42][43] and on-axis Si (001) [44][45][46] . However, monolithically integrated III-V PC lasers on the well-established Si CMOS fabrication technologies have not been demonstrated yet due to the high requirement of crystal quality.…”

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confidence: 99%

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Zhou¹,

Tang²,

Xiang³

et al. 2020

Nat Commun

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Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantumdot PC lasers exhibit single-mode operation with an ultra-low threshold of~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

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“…III-V quantum dots have proven superior optical properties and high tolerance to defects in lasers directly grown on silicon 8 . GaAs-based QD lasers on Si in 1-1.3 μm range have demonstrated excellent performance with diverse designs [9][10][11] . However, to extend the emission wavelength of InAs/(In)GaAs based QDs beyond 1.3 μm has been challenging [12][13][14] .…”

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confidence: 99%

1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon

Zhu

Shi

et al. 2018

Applied Physics Letters

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Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior optical properties and enhanced tolerance to defects, have become the active medium of choice for practical light sources monolithically grown on Si. To fully explore the potentials of integrated lasers for silicon photonics in telecommunications and datacenters, we report the realization of 1.5 μm room-temperature electrically pumped III–V quantum dot lasers epitaxially grown on complementary metal-oxide-semiconductor (CMOS)-standard (001) Si substrates without offcut. A threshold current density of 1.6 kA/cm2, a total output power exceeding 110 mW, and operation up to 80 °C under pulsed current injection have been achieved. These results arose from applying our well-developed InAs/InAlGaAs/InP QDs on low-defect-density InP-on-Si templates utilizing nano-patterned V-grooved (001) Si and InGaAs/InP dislocation filters. This demonstration marks a major advancement for future monolithic photonic integration on a large-area and cost-effective Si platform.

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Monolithic quantum-dot distributed feedback laser array on silicon

Cited by 98 publications

References 40 publications

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon

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