Monolithic sampling head IC

Miura, Akira; Yakihara, T.; Uchida, S.; Oka, Shinichiro; Kobayashi, S.; Kamada, H.; Dobashi, M.

doi:10.1109/22.64583

Cited by 17 publications

(4 citation statements)

References 9 publications

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“…2) Resonant Tunneling Diodes (RTDs): RTDs have less jitter than other triggering methods and have been shown to have extremely fast rise times and triggering (up to 110 GHz) [180], [181]. Instead of using an SRD with an NLTL, another sampling head integrated circuit was fabricated using RTDs [182], [183] in place of the SRD. The bandwidth was calculated to be 26 GHz.…”

Section: A Sampling Heads-monolithic Samplersmentioning

confidence: 99%

50 years of RF and microwave sampling

Kahrs

2003

IEEE Trans. Microwave Theory Techn.

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Measurement of microwave and UHF signals is often done with sampling techniques. In this paper, the techniques and technology of sampling of electrical signals is reviewed from 1950 to the present. It includes both references to the open literature, as well as an extensive review of relevant patents. It also provides an overview of sampling applications and the use of computer technology to compensate and correct for errors in the sampling process.

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Section: A Sampling Heads-monolithic Samplersmentioning

confidence: 99%

50 years of RF and microwave sampling

Kahrs

2003

IEEE Trans. Microwave Theory Techn.

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“…Large-scale integration (LSI) transistor/RTD technology has been demonstrated in compound semiconductor material systems (GaAs, InPbased) [6]. Excellent reliability results have been obtained at elevated temperatures [6,7]. Silicon-based RTDs have not been integrated with silicon transistors yet, but several tunnel NDR device results have been reported [8][9][10][11] and research into silicon-based resonant tunnelling is ongoing [12].…”

Section: Introductionmentioning

confidence: 99%

“…Resonant-tunnelling diodes are of interest for use in multistate and compact memory [19][20][21][22][23][24][25][26][27][28], multivalued and self-latching logic [6,19,[29][30][31][32][33][34][35][36][37][38][39][40], pulse generation [7,[41][42][43][44], analogue-to-digital conversion [45][46][47][48][49][50][51][52], shift registers [6,53,54], oscillator elements [55][56][57], frequency multiplication [58][59][60], low-noise amplification [61,62], neural networks [63], and fuzzy logic …”

Section: Introductionmentioning

confidence: 99%

Tunnelling-based SRAM

Wagt

1999

Nanotechnology

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This paper describes the use of low-current-density tunnelling devices to obtain dense low-power (sub-100 nW/bit) compound semiconductor static random access memory (SRAM); this cell power is over two orders of magnitude lower than the best previously demonstrated in III-V materials. This same circuit topology promises orders of magnitude reduction in static power dissipation for silicon memories, assuming a suitable Si-based negative differential resistance device, at sub-pA current levels, is developed. The concept of low-standby-power tunnelling-based SRAM (TSRAM) is presented in the context of a scaling theory for all memories and a comparison is given across technologies. Experimental results for a 50 nW TSRAM gain cell using ultralow current density (~1 A cm-2) resonant tunnelling diodes and low-leakage heterostructure field-effect transistors are discussed. We describe a one-transistor TSRAM cell, verify its operation, and discuss merits of TSRAM relative to other memory types. Silicon TSRAM standby power is projected to be lower than that of conventional-style silicon SRAM or DRAM.

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“…Other applications for tunneling devices include analog-to-digital convertors [lo, 111, optical receivers [12], samplers [13], and triggering circuits [14], all with microwave to millimeter wave bandwidths. In addition tunneling device architectures based on universal logic gates [15,16] could provide solutions to the interconnect bottleneck of post ULSI ICs.…”

Section: Introductionmentioning

confidence: 99%

Resonant tunneling and quantum integrated circuits

Seabaugh

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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Devices fabricated at the scaling limits of conventional technology must either contend with quantum-mechanical tunneling as a parasitic effect or incorporate tunneling into the device function. Taking the latter approach, the phenomenon of resonant tunneling between epitaxiallygrown double-barrier heterostructures shows significant promise for extending integrated circuit performance both before and beyond the post-shrink era. Recent progress in this technology is reviewed. Introduction Today, a wide range of applications are being explored for resonant tunneling technology including high speed and multistate memory [ 1-31, shift registers/correlators [4], and logic [5-91, where the number of interconnects and transistor delays are reduced by the use of the multi-state tunneling device. Other applications for tunneling devices include analog-to-digital convertors [lo, 111, optical receivers [12], samplers [13], and triggering circuits [14], all with microwave to millimeter wave bandwidths. In addition tunneling device architectures based on universal logic gates [15,16] could provide solutions to the interconnect bottleneck of post ULSI ICs. Resonant Tunneling Diode/"ransistor Technology The resonant tunneling diode (RTD), in its simplest form, consists of an epitaxial sandwich of two wide bandgap electronic barriers cladding an interior quantum well region [17-191. The total 0-7803-2442-0-8/95/$4.00 01995 IEEE 455thickness of the (double barrier structure is typically 10 nm or less. The current-voltage (I-V) characteristic is N-shaped, increasing from zero to a peak current determined by the thickness of the tunnel barriers, at a peak voltage determined by the width of the quantum well. Beyond the initial peak, the current decreases to a minimum given by the sum of parasitic transport processes across the double barrier: phonon scattering, interface roughness scattering, thermionic emission, tunneling through higher energy quantum-well states, and interband tunneling [20].The N-shaped I-V characteristic of the RTD can be used with transistors to increase the functionality of circuits. The combination of RTD and transistor occupies less space than the two devices fabricated separately since the epitaxy for the two devices, one above the other, allows vertical integration. Typically only a single extra mask level is required [6]. As an example, the logical XNOR function is readily contructed using 2 transistors and an integrated RTD/transistor pair, with only a single power supply. The same circuit using emitter-coupled logic requires 9 transistors and two power supplies.Beyond the single peak I-V characteristic, the RTD can be combined epitaxially in series to create multiple current peaks. The multiple current peaks of the series RTD combination can be translated into a multi-state transistor/RTD characteristic. For example, a 4-RTD stack in the emitter of a bipolar transistor can be used to produce a binary output characteristic in response to a multi-valued input voltage [7]. This Characteristic is naturally...

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Monolithic sampling head IC

Cited by 17 publications

References 9 publications

50 years of RF and microwave sampling

50 years of RF and microwave sampling

Tunnelling-based SRAM

Resonant tunneling and quantum integrated circuits

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