1999
DOI: 10.1049/el:19990872
|View full text |Cite
|
Sign up to set email alerts
|

Monolithic series-connected 1.55 µm segmented-ridgelasers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2003
2003
2010
2010

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(3 citation statements)
references
References 6 publications
0
3
0
Order By: Relevance
“…Scaling method (a) is used in bipolar tunnel diode cascade and unipolar quantum cascade lasers, and scaling method (b) is used in bipolar segmented waveguide cascade lasers [2][3][4][5]10]. In method (a), the total impedance of all the gain stages scales as N Z d , where Z d is the impedance of a single gain stage.…”
Section: Scaling In Semiconductor Cascade Lasersmentioning
confidence: 99%
See 2 more Smart Citations
“…Scaling method (a) is used in bipolar tunnel diode cascade and unipolar quantum cascade lasers, and scaling method (b) is used in bipolar segmented waveguide cascade lasers [2][3][4][5]10]. In method (a), the total impedance of all the gain stages scales as N Z d , where Z d is the impedance of a single gain stage.…”
Section: Scaling In Semiconductor Cascade Lasersmentioning
confidence: 99%
“…Since impedance is inversely proportional to area, the impedance of each gain We also make the reasonable assumption that the output power of a cascade laser increases linearly with the increase in the total volume of the laser cavity. This implies that both the output power and the cavity volume scale as N α , where α = 1 for bipolar tunnel diode cascade lasers and 0 for unipolar quantum cascade lasers and bipolar segmented waveguide cascade lasers [3][4][5][6]. Since the output power of an N -stage cascade laser is given by the expression [2-6, 10]…”
Section: Scaling In Semiconductor Cascade Lasersmentioning
confidence: 99%
See 1 more Smart Citation