Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate

A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

“…In memory applications, the CAAC-IGZO FET enables a memory device with substantially long retention time through its low off-state leakage performance [14]- [17]- [18]. Devices for AI applications consume large amounts of power and thus demand an embedded DRAM that consumes little power and is highly integrated.…”

A Large-Size HfO2 Based RRAM Structure Suitable for Integration of One RRAM with One InGaZnO Thin Film Transistor for Large-Area Applications

“…18,19 Therefore, the driving current of IGZO TFT is much smaller than that of MOSFET, for example, it was reported that the driving current of IGZO TFT was less than 1 mA even with a very large channel width/length ratio (i.e., 1000 μm/5 μm) under the bias conditions of 5 V gate voltage (V GS ) and 5 V drain voltage (V DS ). 13 In our study on the integration of IGZO TFT with RRAM, the driving current of the TFT is also lower than 1 mA, as shown in Fig. 1.…”

“…IGZO TFT is a mature technology with the advantages of low cost, high transparency, and good uniformity. [7][8][9] The integration of RRAM with IGZO TFT has various potential large-area applications, such as memory-in-pixel (MIP), [10][11][12] flexible electronics, 13,14 and wearable devices. 15,16 Compared with the conventional MOSFET with a large fieldeffect mobility (i.e., a few hundreds of cm 2 V s −117 ), generally, the field-effect mobility of IGZO TFT is only in the range of tens of cm 2 V s −1 .…”

High-performance amorphous indium-gallium-zinc-oxide thin-film-transistor and its applications

“…The integration of ReRAM with IGZO TFT has various potential large-area applications, such as memory-in-pixel (MIP) [244]- [246] , flexible electronics [247], [248] ,…”

“…Therefore, the driving current of IGZO TFT is smaller than that of MOSFET, for example, it was reported that the driving current of IGZO TFT was less than 1 mA even with a very large channel W/L ratio (i.e., 1000/5 µm) under the bias conditions Chapter 6. 1T1R array based on integration of IGZO TFTs and HfO2-based ReRAMs 136 of 5 V VGS and 5 V VDS [247] . In the 1T1R structure, the driving current of the TFT would limit the compliance current (CC) required for the formation of stable conductive filaments in the forming and set processes as well as the maximum current in the reset process in the ReRAM.…”