Monolithically Integrated 940 nm Half VCSELs on Bulk Ge Substrates

Abstract

High-quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells (MQWs) were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. Even without any design and process optimization for the Ge substrates, the Ge-based half VCSELs have photoluminescence and reflectance spectra comparable to those grown on conventional GaAs wafers. Flat and sub-nm RMS surface roughness and uniform DBR and MQW growth across the wafer were achieved. These results strongly support full VCSEL growth and fabrication on larger-area Ge wafers for the mass production of AlGaAs-based VCSELs.