Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; Hebding, Jeremiah; Saxer, Robert; Islam, S.S.; Hirschman, K.D.; Rommel, S.L.; Kurinec, Santosh; Thompson, Phillip E.; Jin, Niu; Berger, Paul R.

doi:10.1016/j.sse.2004.05.034

Cited by 44 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The mainstream ULSI technology is still dominated by the CMOS or BiCMOS process at present. The developments of Si/SiGe-based resonant interband tunneling diodes (RITD) have shown great potential for integrating with the CMOS technology [10,11]. But they still require the low-temperature MBE system to achieve the whole application.…”

Section: Introductionmentioning

confidence: 99%

Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

Gan

Tsai

Hsien

et al. 2011

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

The monostable-bistable transition logic element (MOBILE) is a promising application for negative differential resistance (NDR) circuit. Previously reported MOBILE is constructed by resonant tunneling diode (RTD) that is implemented by the molecular beam epitaxy (MBE) process. However in this paper, we first propose a NDR circuit composed of standard Si-based metal-oxide-semiconductor field-effect transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Then we demonstrate the inverter, NAND, and NOR gate operations using this MOS-HBT-NDR-based MOBILE circuit. The great advantage of this NDR-based application is that we can implement it using the standard SiGe BiCMOS process without the need for the MBE system.

show abstract

Section: Introductionmentioning

confidence: 99%

Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

Gan

Tsai

Hsien

et al. 2011

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

show abstract

“…The RTD basically consists of one or multiple quantum wells and can be fabricated using an advanced epitaxy growth technique such as molecular-beam epitaxy (MBE), which is not easily to Manuscript [7], [8]. But they still require the MBE system to accomplish the whole application.…”

Section: Introductionmentioning

confidence: 99%

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

Gan

Liang

Chen

2010

IEICE Trans. Inf. & Syst.

View full text Add to dashboard Cite

SUMMARYThe paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor fieldeffect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices. Specifically, this three-peak NDR circuit is biased by two switch-controlled current sources. Compared to the traditional MVL circuit made of resonant tunneling diode (RTD), this multiple-peak MOS-HBT-NDR circuit has two major advantages. One is that the fabrication of this circuit can be fully implemented by the standard BiCMOS process without the need for molecular-beam epitaxy system. Another is that we can obtain more logic states than the RTD-based MVL design. In measuring, we can obtain eight logic states at the output according to a sequent control of two current sources on and off in order.

show abstract

“…However the main stream of the ULSI is still the Si-based CMOS or SiGe-based BiCMOS process at present. Some researchers have proposed the Si/SiGe RTD and resonant interband tunneling diodes (RITD) constructed by the strained layer and quantum-well mechanical tunneling structure [7][8][9]. Although the devices are based on Si/SiGe material, the fabrication process still requires the CVD or MBE system.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Gan

Liang

Tsai

et al. 2008

Solid-State Electronics

View full text Add to dashboard Cite

Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

Cited by 44 publications

References 11 publications

Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Contact Info

Product

Resources

About