Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W

Mûller, Martín; Philippens, M.; Grönninger, Günther; König, Harald; Moosburger, J.; Herrmann, G.; Reufer, M.; Luft, J.; Stoiber, Michael; Lorenzen, Dirk

doi:10.1117/12.699827

Cited by 9 publications

(6 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gain switched diode lasers integrated with tailored electronic drivers, generating high pulse power with a few nanoseconds long current pulses with amplitudes up to 1 kA, are ideal candidates for such Li-DAR systems [3,4]. The commercialization of these diode lasers necessitates a further increase in detection range and, thus, higher pulse power and a minimization of the required pulse current amplitudes, which can be achieved by epitaxially stacking multiple active regions, separated by tunnel junctions [5][6][7][8][9]. In this way, a nearly N-fold increase of optical power at constant current has been reported, where N is the number of stacked active regions.…”

mentioning

confidence: 99%

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Ammouri

Christopher

Fricke

et al. 2022

Electronics Letters

View full text Add to dashboard Cite

The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 µm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.

show abstract

mentioning

confidence: 99%

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Ammouri

Christopher

Fricke

et al. 2022

Electronics Letters

View full text Add to dashboard Cite

show abstract

“…Such drivers enabled the generation of 4 to 20 ns long pulses with an optical peak power in excess of 600 W at a current of 900 A [2]. In order to avoid these high currents needed to achieve the high peak powers, several laser diodes separated by tunnel junctions can be monolithically stacked in series [3][4][5]. In the ideal case the slope efficiency of such a nanostack laser scales linearly with the number N of diodes, so that far above threshold there is an N-fold increase of the power at the same injection current.…”

mentioning

confidence: 99%

Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

Wenzel

Maaßdorf

Zink

et al. 2021

Electronics Letters

View full text Add to dashboard Cite

A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third-order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm 2 . The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm −1 . The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.

show abstract

“…Such strategies include chip-level designs to increase electro-optic efficiency, including designs based on multiple pn junctions, which significantly reduce the drive current by increasing the operating voltage. [10] Diode operation at temperatures well below ambient (e.g. ; -50 C) has also been proposed as a path to enhanced efficiency.…”

Section: Pump Diode Optimizationmentioning

confidence: 99%

Engineering Diode Laser Pumps for Extremely Large-Scale Laser Systems

et al. 2013

View full text Add to dashboard Cite

Several large scale laser applications require diode pumps for high efficiency and average power, but are sensitive to diode performance-cost tradeoffs. This paper describes approaches for addressing these issues, using the example of inertial fusion energy drivers. OCIS codes: (140.0140) Lasers and laser optics, (140.3480) Lasers, diode-pumped (140.2010) Diode laser arrays IntroductionThere is currently great interest in extremely large laser systems for applications such as inertial fusion energy (IFE) and scientific exploration. These applications require excellent beam quality and optical pulse durations of a few nanoseconds, for which laser designs utilizing optically pumped gain media are typically employed.[e.g.; 1-4] When such systems must operate at high repetition rates (above 10 Hz) or with high efficiency (>10%), semiconductor laser diodes are used to pump the gain media because of their high brightness, high wallplug efficiency, and narrow emission spectrum.The diode pumps can contribute a significant fraction of the overall cost of these large systems. For this reason, several approaches have been proposed to mitigate the impact of diode costs. These include design choices at the system level, such as simplifying the requirements for pump coupling to the gain medium [1] and using gain media with longer energy storage lifetimes.[3-5] These approaches also include component level design modifications, including increasing the power per diode chip,[1, 6] simplifying the package design, [7] and operation at cryogenic temperatures.[8] This paper discusses the performance tradeoffs of such approaches, methodologies for quantitatively assessing their impact on system costs, and the conclusions resulting from these analyses.

show abstract

Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W

Cited by 9 publications

References 0 publications

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

Engineering Diode Laser Pumps for Extremely Large-Scale Laser Systems

Contact Info

Product

Resources

About