This work describes the response of Ru/TiN barrier films to solutions of H 2 O 2, guanidine carbonate (GC) and other additives in terms of open circuit potential measurements and potentiodynamic polarization data. It was found that an aqueous solution containing 1 wt% H 2 O 2 , 0.25 wt% GC and 5 mM BTA is effective in maintaining a low corrosion potential gap of Ru and Cu at ∼15 mV at pH 9. The slurry prepared by adding 5 wt% silica to this mixture yields a Ru removal rate (RR) of 10 nm/min and a Cu RR of 12 nm/min at 2 psi polishing pressure. The effect of carbonate and guanidinium ions as well as BTA on the corrosion behavior of Ru and Cu is discussed. Dodecyl-benzene-sulfonic acid (DBSA) was also found to be an effective corrosion inhibitor of Ru in the presence of H 2 O 2 and GC based solutions at pH 9 with a good post-polished surface finish but reduced the Ru RRs to ∼ 2 nm/min. As the scaling of interconnect structures continues beyond the 22 nm technology node, the width of copper lines continues to diminish. At such lower line widths, the effect of electron scattering on conductivity increases resulting in higher resistivity and reduced current carrying capacity. One way of mitigating this effect is to reduce the barrier liner thickness to less than ∼3 nm to accommodate a thicker copper line within a given trench. In such situations, the Ta/TaN bilayer, commonly used as barrier liner in the earlier copper interconnects, 1-4 faces several challenges. These include an inability to conformally deposit a thin barrier film in the high aspect ratio trenches which inevitably leads to void formation in the subsequently deposited copper seed layer. To surmount such challenges, Ruthenium (Ru) and several of its alloys have been proposed as alternative barrier liners.5-10 These have the added advantage of direct electroplating of Cu, eliminating the need for a Cu seed layer.However, Ru is not an ideal barrier as it forms columnar structures and, hence, provides diffusion paths for Cu at the grain boundaries 11,12 and also has poor adherence to the underlying dielectrics which may result in the peeling of these films during polishing.13,14 Therefore, a thin (∼1 nm) TaN or TiN layer is deposited between Ru and the dielectric interface which helps in both negating the columnar growth of Ru and improving the adherence between Ru and the dielectric. 13,14 Of these, Ru/TiN structures were chosen for the analysis here since Amanapu et al. 15 have shown that these films are polished faster compared to those on TaN. They attributed this to the difference in the crystalline orientation of the Ru films deposited on TiN and TaN layers.It is very difficult to obtain adequate removal rates (RR) of Ru during planarization since it is a noble and hard material, making it a challenge to achieve the desired RR selectivity to Cu at the barrier interface. Moreover, Ru is more cathodic to Cu since its standard reduction potential (0.21 V vs. SCE) is greater than that of Cu (0.1 V vs. SCE). Hence, there is a high possibility of Cu corro...