Monte Carlo algorithm for hot phonons in polar semiconductors

Lugli, Paolo; Jacoboni, Carlo; Reggiani, L.; Kočevar, P.

doi:10.1063/1.97925

Cited by 92 publications

(45 citation statements)

References 12 publications

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“…However, most electronic transport studies based on this method ignore electron-electron scattering [9][10][11][12] . This is reasonable as the conventional charge current is not affected in a major way by electron-electron scattering as the latter does not directly contribute to momentum relaxation.…”

Section: Introductionmentioning

confidence: 99%

The role of electron-electron scattering in spin transport

Kamra

Ghosh

2011

Journal of Applied Physics

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We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.

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Section: Introductionmentioning

confidence: 99%

The role of electron-electron scattering in spin transport

Kamra

Ghosh

2011

Journal of Applied Physics

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“…Ensemble MC method was similar to that in Lugli et al (1987). Particularly, in our iteration scheme we considered the phonon number N q in the momentum space cell q to be…”

Section: Parameters and Methodsmentioning

confidence: 99%

Electron and phonon dynamics in indium antimonide crystals

Brazis¹,

Raguotis²

2007

Opt Quant Electron

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Monte Carlo method is used for the study of electron and phonon dynamics in InSb crystals in the steady electric field. If the lattice temperature is significantly lower than the Debye temperature, and the lifetime of phonons is finite, their accumulation (especially LO ones) is found to occur in a limited range of momentum space. Accumulated phonons are shown to affect the values of electron drift velocity and mean energy. The values are subject to continuous increase in the time of ballistic flight upon step-like switching-on electric field, and subsequent decaying oscillations before accessing the stationary state. In contrast to these, the transient response of LO phonon number shows an abrupt increase after a picosdecond-scale delay, with a trend to subsequent saturation. Phonon band population inversion is discussed in relation to possible stimulated emission of photons.

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“…The static nature of optical phonons results in their accumulation in large numbers in high-field areas, giving rise to nonequilibrium optical phonon distribution functions. These nonequilibrium phonon distributions, associated with the hot-phonon effect [4], influence directly electron transport by modifying electron-phonon scattering rates.…”

Section: Self-heating Effects In Semiconductor Devicesmentioning

confidence: 99%

Monte Carlo study of self-heating in nanoscale devices

et al. 2012

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Progress in device miniaturization combined with the increase in integrated circuit packing density, as described by Moore's law, have been accompanied by an exponential increase in on-chip heat generation. In this context, there is an increasing demand for reliable electrothermal modeling techniques that accurately account for self-heating and allow a better understanding of thermal transport at the nanoscale. This paper presents a theoretical demonstration of the electrothermal phenomena in a variety of nanodevices, ranging from conventional Si-and III-V-based fieldeffect transistors (FETs) to nanowire devices. Simulation work relies on a very well-established Monte Carlo simulator considering self-heating using phonon statistics. The electrothermal simulator self-consistently couples a threedimensional (3D) electronic trajectory simulation with the solution of the heat diffusion equation. The Monte Carlo technique is very suitable for the simulation of electronic transport in nanoscale semiconductor devices, as it is free from low-field near-equilibrium approximations. In addition, the method is well-suited for electrothermal modeling, since it allows a detailed microscopic description of electron-phonon scattering which provides an inherent and direct prediction of the spatial distribution of heat generation. The paper is divided into three parts. The first T. Sadi ( ) part includes a description of the computational approach to simulate electrothermal transport in FETs. The advantages of using the simulation method are demonstrated by presenting full results from the simulation of an InGaAschannel high-electron mobility transistor (HEMT). The second part concerns electrothermal transport in conventional field-effect devices such as Si and III-V HEMTs. An investigation of self-heating effects in high-power devices, such as AlGaN/GaN HEMTs, and relevant Si-based FETs, e.g. Si/SiGe HEMTs, is presented. This part demonstrates how the analysis of self-heating effects may help us in understanding the electronic and thermal properties of nanoscale FETs. The third part of the paper consists of studying the electrothermal behavior of advanced structures. In this case, charge transport and self-heating effects are investigated in metal-insulator-semiconductor FETs (MISFETs) with a single InAs nanowire channel. Despite low heat dissipation, simulations predict significant local temperatures, due to the high current density levels and the poor thermal management in these nanowire structures.

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Monte Carlo algorithm for hot phonons in polar semiconductors

Cited by 92 publications

References 12 publications

The role of electron-electron scattering in spin transport

The role of electron-electron scattering in spin transport

Electron and phonon dynamics in indium antimonide crystals

Monte Carlo study of self-heating in nanoscale devices

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