Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

Rengel, Raúl; Matéos, J.; Pardo, D.; González, T.; Martín, María J.

doi:10.1088/0268-1242/16/11/310

Cited by 37 publications

(26 citation statements)

References 30 publications

(50 reference statements)

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“…As it can be observed, the bias dependence of these parameters agrees with the tendency in other MOSFETs . The value of R is somewhat similar for both transistors while the value of P is higher for the JL MOSFET, indicating a higher drain current noise, which is caused by the much stronger impurity scattering .…”

Section: Resultssupporting

confidence: 86%

“…To provide more information related to the noise performances of the devices in practical circuits, four typical noise parameters (minimum noise figure NF min , equivalent noise resistance R n , and phase and module of the optimum reflection coefficient Г opt ), together with the associated gain (G ass ), are calculated, using the formulas below:

F_{min} = 1 + 2 \frac{f}{f_{t}} \sqrt{PR (1 - C^{2})}

G_{italicass} = \frac{f_{t}}{f} \frac{\sqrt{1 - C^{2}}}{C} \frac{((), C_{gs} + C_{gd})}{C_{gd}}

R_{normaln} = \frac{P}{g_{m}}

Γ_{opt} = \frac{1 - Y_{opt}^{'}}{1 + Y_{opt}^{'}}

where Y opt ′ is the normalized optimum noise source admittance.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

2013

Int J Numerical Modelling

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The dynamic characteristics and high-frequency noise performance of junctionless (JL) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated using a full-band Monte Carlo simulator. A detailed comparison with conventional inversion mode (IM) MOSFETs is presented. The results of the radio frequency performance indicate that, compared with the traditional IM MOSFET, the JL transistor exhibits lower drain current (I ds ), transconductance (g m ), and cut-off frequency (f t ) because of its lower electron velocity in the high doping channel. However, owing to a reduced output conductance (g ds ) and a larger C gs /C gd ratio (C gs is the gate-to-source capacitance; C gd is the gate-to-drain capacitance), the JL MOSFET presents an improvement in the intrinsic voltage gain (A vo ) and maximum frequency of oscillation (f max ) in comparison with the IM transistor, which makes it be a viable option for the high-voltage and power gain analog/radio frequency applications. The results of the noise characteristics show that the JL MOSFET exhibits higher minimum noise figure (NF min ) and equivalent noise resistance (R n ), indicating an inferior noise performance.

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Section: Resultssupporting

confidence: 86%

F_{min} = 1 + 2 \frac{f}{f_{t}} \sqrt{PR (1 - C^{2})}

G_{italicass} = \frac{f_{t}}{f} \frac{\sqrt{1 - C^{2}}}{C} \frac{((), C_{gs} + C_{gd})}{C_{gd}}

R_{normaln} = \frac{P}{g_{m}}

Γ_{opt} = \frac{1 - Y_{opt}^{'}}{1 + Y_{opt}^{'}}

where Y opt ′ is the normalized optimum noise source admittance.…”

Section: Resultsmentioning

confidence: 99%

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

2013

Int J Numerical Modelling

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“…The results of these parameters as a function of gate voltage overdrive (V gs À V t ) are shown in Figure 11. The bias dependence of these parameters is in good agreement with those obtained in bulk MOSFET [16]. P and R of the DG structure feature lower values than those of the SG structure, indicating lower drain and gate current noise.…”

Section: Noise Resultssupporting

confidence: 85%

“…Therefore, it could help us understand the noise mechanism of the device more physically and determine accurately the drain and gate noise equivalent sources and their crosscorrelation. Several groups have applied the MC technique to analyze the dynamic or noise characteristics of different kinds of FETs [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

Mohamed

2013

Int J Numerical Modelling

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In this paper, a full-band Monte Carlo simulator is employed to study the dynamic characteristics and highfrequency noise performances of a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) with 30 nm gate length. Admittance parameters (Y parameters) are calculated to characterize the dynamic response of the device. The noise behaviors of the simulated structure are studied on the basis of the spectral densities of the instantaneous current fluctuations at the drain and gate terminals, together with their cross-correlation. Then the normalized noise parameters (P, R, and C), minimum noise figure (NF min ), and so on are employed to evaluate the noise performances. To show the outstanding radio-frequency performances of the DG MOSFET, a single-gate silicon-on-insulator MOSFET with the same gate length is also studied for comparison. The results show that the DG structure provides better dynamic characteristics and superior highfrequency noise performances, owing to its inherent short-channel effect immunity, better gate control ability, and lower channel noise.

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“…NF min is also represented by using the noise parameters and f T , as the following formula :

N {normalF}_{min} = 1 + 2 true(\frac{f}{f_{normalT}} true) \sqrt{P R true(1 - C^{2} true)} .

…”

Section: Simulation Methodsmentioning

confidence: 99%

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Takahashi

Hatsushiba

Fujikawa

et al. 2016

Physica Status Solidi (a)

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We study comparatively the RF and the noise characteristics for the In0.7Ga0.3As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC‐MC) simulation. The increase in the current fluctuation <ΔIds2> with Vds is caused by the increase in the electron velocity variance σnormalv2 (i.e., the electron heating); this indicates clearly that the low Vds operation is essential to lowering <ΔIds2>. The smaller electron effective m* results in the larger σnormalv2 and thus the larger <ΔIds2>, yet it allows the low Vds operation through the higher μ. The InSb HEMT with the channel of the smallest m* overcomes the inherent nature of the larger <ΔIds2> through the ability of the lower Vds operation along with the larger gm. Eventually, the InSb HEMT shows the smallest minimum noise figure NFmin of 0.31 dB with the associated gain Gass of 12.4 dB at 100 GHz and the highest cutoff frequency fT of 1.8 THz at Vds of 0.2 V. These results indicate the potential of the InSb HEMT for the ultra‐low power, ultra‐high frequency, and the ultra‐low noise transistor.

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Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

Cited by 37 publications

References 30 publications

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

Analysis of the RF and noise performance of junctionless MOSFETs using Monte Carlo simulation

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

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