Monte‐Carlo‐based simulation study of ion‐implantation in gallium oxide devices

Abstract

A computational study is done to carry out ion implantation for isolation in gallium oxide based devices using SRIM-2013 simulation tool. In this paper, deep acceptors for gallium oxide like Mg-and N-based implantation results and damage physics are discussed. Displacement per atoms (DPA)-based calculation is done to compare damage analysis for N and Mg ion implantation at 50 KeV beam energy. DPA calculations show that Mg generates more damages and vacancies to target gallium oxide with compared to N ion implantation. Furthermore, ion implantation doses are also calculated for isolation of 300 nm target depth of gallium oxide. Multiple energy ionimplantation for nitrogen (35/70/140 KeV) and for magnesium (50/100/165 KeV) in the gallium oxide target is simulated. Lighter ion nitrogen results into more ionization of gallium oxide compared to heavier magnesium ions for the same projected range.Simulation results show that a total energy of 142 KeV (57.96%) of nitrogen ion is lost during ionization process, whereas, for magnesium ion, the total energy loss is 89.49 KeV (28.41%) during ionization.

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

“…Since the development of ohmic connections in the case of gallium oxide is not dominated by the metalwork function, this anisotropy also necessitates some other pretreatment prior to contact deposition. For that, several techniques have been used to obtain low specific resistance contacts which include ion implanted layers, [21][22][23] spin-on glass technique, [24] incorporation of indium tin oxide (ITO) layer [25] followed by rapid thermal annealing (RTA) which results in a locally strongly doped area beneath the contact. Some other surface states management techniques are also used.…”