Monte Carlo calculation of electronic noise under high-order harmonic generation

Shiktorov, P.; Starikov, E.; Gruz̆inskis, V.; Reggiani, L.; Varani, L.; Vaissière, J. C.

doi:10.1063/1.1488694

Cited by 25 publications

(19 citation statements)

References 5 publications

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“…The modifications caused by the addition of external fluctuations are investigated by studying the correlation function of the velocity fluctuations and the integrated spectral density, as a function of the characteristic parameters of the external noise source [13,14]. The results are discussed and compared with those obtained in the presence of a correlated noise source.…”

Section: Introductionmentioning

confidence: 99%

External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals

Adorno

Pizzolato

Valenti

et al. 2012

Reports on Mathematical Physics

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We study the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples by using a Monte Carlo approach. The system is driven by an external periodic electric field in the presence of a random telegraph noise source. The modifications caused by the addition of external fluctuations are investigated by studying the spectral density of the electron velocity fluctuations for different values of the noise parameters. The findings indicate that the diffusion noise in low-doped semiconductors can be reduced by the addition of a fluctuating component to the driving electric field, but the effect critically depends on the features of the external noise source.

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Section: Introductionmentioning

confidence: 99%

External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals

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Pizzolato

Valenti

et al. 2012

Reports on Mathematical Physics

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“…Therefore, under cyclostationary conditions, these dynamical effects have to be considered and nonlinear analysis of noise must be performed. Previous studies have analysed the electronic noise under large-signal conditions for the case of bulk semiconductor and simple devices [3][4][5][6]. However, to our knowledge, the noise behaviour in semiconductor systems has not been investigated in the presence of a mixing of coherent electromagnetic radiations of commensurate frequencies.…”

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confidence: 99%

“…where t is the correlation time, and the averaging is over the sequence of equivalent time moments τ =s + mT L , with s belonging to the time interval [0, T L ] and m is an integer [4]. In our case, T L is the period of the lowest frequency of the periodic excitation fields.…”

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Monte Carlo analysis of electronic noise in semiconductors under sub‐terahertz cyclostationary mixed fields

Capizzo¹,

Adorno²,

Zarcone³

2006

Phys. Status Solidi (c)

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This paper reports the results of Monte Carlo simulations of electronic noise in a GaAs bulk driven by two mixed high-frequency large-amplitude periodic electric fields. Under these conditions, the system response shows some peculiarities in the noise performance, such as a resonant-like enhancement of the spectra near the two frequencies of the applied fields. The relations among the frequency response and the velocity fluctuations as a function of intensities and frequencies of the sub-terahertz mixed excitation fields have been investigated.1 Introduction The sensitivity of semiconductor based devices is strongly affected by the presence of noise, which sets the lower limit for signal detection in electronic circuits. Much effort has been devoted to achieve a physical understanding of microscopic noise mechanisms within solid-state electron devices and to model electronic noise under small-signal conditions. However, when real materials and devices are used at very high frequencies around the THz region (broadband services, mobile network, oscillators, mixers, etc), they exhibit strong nonlinearities, such as the appearance of hysteresis cycle in their characteristics and the generation of harmonics. High-order harmonic generation and frequency mixing effects have been investigated in low-doped bulk semiconductors subject to far-infrared intense electric field [1,2]. These studies have shown that, under wave-mixing signal regime an enhancement of the harmonic generation can be produced. This fact can be useful for possible applications of semiconductor devices as sources of THz radiation. Nevertheless, the extraction of these harmonics is limited by the intrinsic high-frequency noise of the nonlinear medium, which can mask the generated high-order harmonics. Therefore, under cyclostationary conditions, these dynamical effects have to be considered and nonlinear analysis of noise must be performed. Previous studies have analysed the electronic noise under large-signal conditions for the case of bulk semiconductor and simple devices [3][4][5][6]. However, to our knowledge, the noise behaviour in semiconductor systems has not been investigated in the presence of a mixing of coherent electromagnetic radiations of commensurate frequencies. The complex nonlinear phenomena involved in the wave mixing regime make essential an accurate simulation and analysis of the noise performance in semiconductor materials. The paper is organised as follows: in Sect. 2 a brief description of the model used in the many-valleys anisotropic Monte Carlo code and the theoretical approach used for fluctuations estimation are presented; in Sect. 3 the main results of calculations are reported and discussed and final conclusions are given in Sect. 4.

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“…Moreover, an intense periodic electric field can deeply modify the spectral density of electron fluctuations with respect to the case in which a static electric field is applied. For this reason, several studies have analysed the electronic noise in devices operating under static and large-signal periodic conditions [4][5][6][7][8][9][10][11][12][13][14][15][16]. In spite of this, so far little has been done to investigate electron noise properties in silicon structures operating under oscillating electric fields.…”

Section: Introductionmentioning

confidence: 99%

Hot-electron noise features in silicon crystals operating under periodic signals

Adorno¹,

Graceffa²,

Pizzolato³

et al. 2014

Lith. J. Phys.

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We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric fields. To simulate the dynamics of electrons in the bulk, by taking into account the main details of band structure, scattering processes, as well as heating effects, a Monte Carlo approach is used. The noise properties are investigated by computing the velocity fluctuations correlation function, its spectral density, and the total noise power for different values of the amplitude and frequency of the driving field. We show that the noise features are significantly affected by the electric field amplitude and frequency and discuss their peculiarities in comparison with those exhibited in the static field case. We find the integrated spectral density, i. e. the total noise power, monotonically reducing its value with the increase of the field frequency, for each amplitude of the applied field. These results can be considered a first step towards a full understanding of the physical characteristics of electronic noise in Si devices, driven by periodic electric fields, relevant, for example, for harmonic generation purposes.

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Monte Carlo calculation of electronic noise under high-order harmonic generation

Cited by 25 publications

References 5 publications

External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals

External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals

Monte Carlo analysis of electronic noise in semiconductors under sub‐terahertz cyclostationary mixed fields

Hot-electron noise features in silicon crystals operating under periodic signals

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