Monte Carlo calculations of the extraction of scintillation light from cryogenic N-type GaAs

Derenzo, Stephen E.

doi:10.1016/j.nima.2022.166803

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Many developing applications for SNSPDs such as sub-GeV DM searches using n-type GaAs as cryogenic scintillating targets [27][28][29]45 and nanowires directly as target masses 46 require large sensor active areas (cm 2 -scale) to realize a robust experiment [47][48][49] . As a nanofabrication technique, the serial nature of EBL becomes unfeasible to write dense micronscale patterns over large active areas, and the 1 mm 2 devices are at the limit of EBL's scope.…”

Section: Discussionmentioning

confidence: 99%

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Luskin¹,

Schmidt²,

Korzh³

et al. 2023

Preprint

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Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel 1mm 2 superconducting microwire single photon detectors (SMSPDs) with 1 µm-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all 8 pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity published to date, and the first report of an SMSPD array. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with cm 2 -scale active area and beyond.

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Section: Discussionmentioning

confidence: 99%

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Luskin¹,

Schmidt²,

Korzh³

et al. 2023

Preprint

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show abstract

“…This paper describes the use of Feynman photon path integrals [1][2][3][4] to compute the probability of detecting reflected, diffracted, and scattered photons at different points in space after elastic interactions with different volumes containing conduction electrons. It was largely motivated by the discovery that n-type GaAs is a bright cryogenic scintillator [5][6][7] and the supposition that most of the reported narrow-beam absorption [8,9] is not absolute absorption but a novel optical scattering mechanism that allows the scintillation photons to avoid internal reflection trapping [10]. It is an attractive target material for detecting low-energy electronic excitations from interacting dark matter and has no apparent afterglow [5].…”

Section: Introductionmentioning

confidence: 99%

Feynman photon path integral calculations of optical reflection, diffraction, and scattering from conduction electrons

Derenzo

2023

Nuclear Instruments and Methods in Physics Research Section A:

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Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Luskin

Schmidt

Korzh

et al. 2023

Applied Physics Letters

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Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel 1 mm2 superconducting microwire single photon detectors (SMSPDs) with 1 μm-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all eight pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity, and it extends the SMSPD to an array format. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with cm2-scale active area and beyond.

show abstract

Monte Carlo calculations of the extraction of scintillation light from cryogenic N-type GaAs

Cited by 4 publications

References 10 publications

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Feynman photon path integral calculations of optical reflection, diffraction, and scattering from conduction electrons

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

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