Monte Carlo comparison of heterojunction cathode Gunn oscillators

Lee, C.

doi:10.1049/el:19900277

Cited by 7 publications

(2 citation statements)

References 1 publication

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“…Thus the doping level of the drift region was chosen to be much larger than typically used for GaAs or InP Gunn devices. 45,46 Since the mobility of GaN is lower in comparison to both GaAs and InP, the time required to build up a stable domain is higher for the same background doping. The higher doping chosen here helps offset the lower mobility value.…”

Section: Monte Carlo Simulation Detailsmentioning

confidence: 99%

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Joshi

Sridhara

Shah

et al. 2003

Journal of Applied Physics

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studies of transferred electron oscillators based on bulk wurtzite GaN are presented. Two structures have been examined: ͑i͒ devices with the conventional single notch structure, and ͑ii͒ repetitive structures with serial segments to fashion a ''multiple domain'' device. Wurtzite material has been chosen because of the higher drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such as the operating frequency, output power, and conversion efficienc are calculated. Variations due to changes in temperature, biasing voltage, and device length are also included. It is shown that multidomain Gunn diodes can lead to significan improvements in output power over conventional, single-transit structure, and so such multiple GaN diodes merit serious experimental study.

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Section: Monte Carlo Simulation Detailsmentioning

confidence: 99%

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Joshi

Sridhara

Shah

et al. 2003

Journal of Applied Physics

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“…The launcher is designed to be wide enough to resist low-energy tunneling but narrow enough to limit resistance. The doping spike following the launcher is required to achieve the desired electrical field in the transit region and avoid the development of a depletion region in the transit region [5], [6] [7] [8]. The transit region lengths and doping concentrations that were used to observe the double Gunn effect are listed in table 1.…”

Section: Graded Gap Injectormentioning

confidence: 99%

Power-frequency performance of step-graded double Gunn diodes

Butts

El-Ghazaly

2023

J. Phys.: Conf. Ser.

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Simulations of conventional Gunn diodes containing the double Gunn effect have shown a significant increase in oscillation frequency and frequency range. However, conventional Gunn diodes suffer from higher phase noise, lower efficiency, and reduced temperature stability due to the lack of a hot electron injector. A study on the performance of a Double Gunn diode with a graded gap injector is presented. The second region of negative differential mobility is gradually introduced in several temperature-dependent mobility models, which are implemented in an energy balance simulation. Devices with transit lengths of 0.7μm, 1.1μm, and 1.65μm are simulated. All devices experience an increase in oscillation frequency with increasing intensities of the double Gunn effect. The frequency range doubles at significant intensities of the effect in the devices with transit lengths of 0.7μm and 1.65μm.

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Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators

Lee

1991

Computational Electronics

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Monte Carlo comparison of heterojunction cathode Gunn oscillators

Cited by 7 publications

References 1 publication

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Power-frequency performance of step-graded double Gunn diodes

Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators

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