Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs

Wang, Mingyan; Li, Yuanjie; Wen, Zuokai; Zhou, Heng; Cui, Peng; Lin, Zhaojun

doi:10.1109/led.2022.3217127

Cited by 9 publications

(8 citation statements)

References 26 publications

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“…where A is the 2-D normalization constant that converts the scattering rate per area, m * is the electron effective mass in GaN,  is the Planck constant, θ is the scattering angle from k to k ′, and S(q, Te) is the screening function, which can be written as [15][16][17]:…”

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

“…q stands for the value change of wave vector，and Π(q, T e , E) is the polarizability function. The scattering matrix element can be written as [15][16][17]:…”

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

“…We determined ρ 1 and ρ 3 at the leftmost endpoint and the rightmost endpoint of the gate. According to the PCF scattering definition, the PCF additional scattering potential is written as [17]:…”

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

“…And other scattering rate formulations primarily refer to the scattering rate form in the literature [18]. Our MC simulation is based on a fixed potential [17,19]. Below we present a brief introduction of the method used to study the electron transport.…”

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

“…Below we present a brief introduction of the method used to study the electron transport. 1) Initially, we determined the potential and electric field distribution within the GaN channel using the analytical solution to the Poisson equation [17].…”

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

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Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Wang,

Lv,

Zhou

et al. 2024

IEEE Access

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In this paper, a gate bias-dependent velocity-field relationship model and a physics-based analytical model of current-voltage characteristics in AlGaN/GaN HFETs are developed. Based on Monte Carlo simulations, the experimental phenomenon that the channel electron velocity varies with the gate voltage is successfully reproduced. A modified gate bias-dependent velocity-field relationship model is established to obtain the velocity-field relationship of our fabricated AlGaN/GaN HFETs considering Polarization Coulomb Field (PCF) Scattering. This new velocity-field model can accurately describe the experimental phenomenon of velocity modulation by various gate biases and effectively reduce the fitting parameters. The parameters of the velocity-field model are incorporated into the compact model. The method cleverly maintains the direct relation between the velocity-field model parameters and AlGaN/GaN HFETs. All parameters have a specific physical meaning in our compact model and parasitic resistance factors and channel modulation effects are also incorporated. We validate the model with experimental data for AlGaN/GaN HFETs with gate lengths of 0.2 µm and 0.35 µm, respectively, and obtain good agreement. INDEX TERMS Monte Carlo; Compact model; Velocity-field relationship; AlGaN/GaN HFETs; Polarization Coulomb Field Scattering.

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Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

“…q stands for the value change of wave vector，and Π(q, T e , E) is the polarizability function. The scattering matrix element can be written as [15][16][17]:…”

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

Section: Monte Carlo Model Descriptionmentioning

confidence: 99%

See 3 more Smart Citations

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Wang,

Lv,

Zhou

et al. 2024

IEEE Access

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Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

Zhou,

Lv,

Liu

et al. 2024

Solid-State Electronics

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Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Wang,

Zhou,

Liu

et al. 2024

Applied Physics Letters

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This work reports on the extraction and simulation of the electron velocity–gate voltages relationship for sub-100 nm InAlN/GaN heterojunction field-effect transistors (HFETs). A peak electron velocity (ve) at an electron density (ns) of 0.41 × 1013 cm−2 was observed at 1.06 × 107 cm/s in an InAlN/GaN HFET with 60 nm gate length (Lg) by delay time analysis. The ve at a high ns of 1.5 × 1013 cm−2 was observed at 0.6 × 107 cm/s. This peak ve behavior is explained by polarization Coulomb field (PCF) scattering and optical phonon scattering based on a Monte Carlo method. As Lg scaled from 350 to 60 nm, the current gain cutoff frequency (fT) and transconductance (gm) were improved. However, the thermal performance was degraded with a bad figure of merit P150 °C. Although a weakening of the control capability of Vgs on ns (Δns/ΔVgs) was observed in the shorter Lg device, which leads to a decrease in device gm, the larger electron velocity by the increased lateral electric field (E) and the larger Δve/ΔVgs by the increased PCF scattering still enhance the peak gm. Results indicate that the enhancement of Δve/ΔVgs is a vital method to strengthen the modulation of the gate on current and to suppress the short channel effect in GaN HFET. Our work supports a deeper understanding and analysis of sub-100 nm InAlN/GaN HFET device performance and physical mechanisms.

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Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs

Cited by 9 publications

References 26 publications

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

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