Monte Carlo modeling of silicon crystal growth

Beatty, Kirk M.; Jackson, K. A.

doi:10.1016/s0022-0248(99)00836-2

Cited by 83 publications

(55 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This suggests the presence of {1 1 1} facets in the solid, that do not evolve as fast as other orientations, as previously observed in Refs. [9,16,21,26]. In other words, the broad faces of a given particle, suggested to be of {1 1 1} type, appear to be growing much slower with respect to the edges of the particle, giving rise to the observed structural changes [26].…”

Section: D Reconstructionsmentioning

confidence: 99%

“…In addition, the {1 1 1} planes have very low interfacial mobility: the Jackson a factor [15] for Si {111} is 2.7 [16]; the relatively high value of a (a f111g > 2) indicates that the {111} surface is likely atomically smooth and thus there is a barrier to nucleation of the next atomic layer [16,15]. Beatty and Jackson [16] simulated the growth of Si using a Monte Carlo scheme; they found that the growth rate, v, increases linearly with undercooling, DT, for a rough Si {1 0 0} plane while v varies exponentially with DT for a {1 1 1} facet in a 2D poly-nuclear growth mode [16,17]. For low undercooling, then, the growth velocity on a facet plane is much smaller than on a rough plane.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

et al. 2015

View full text Add to dashboard Cite

a b s t r a c tThe coarsening process of an Al-29.9wt%Si alloy is studied using four-dimensional phase contrast X-ray tomography. This alloy is composed of highly anisotropic, primary Si particles in an eutectic matrix. We analyze the morphology of the primary Si particles during coarsening by determining the interface normal distribution and the interface shape distribution. The inverse surface area per unit volume increases with the cube root of time despite the lack of microstructural self-similarity and highly anisotropic particle morphology. More specifically, over the time frame of the experiments, the Si particles evolve from mostly faceted domains to a more isotropic structure that is not given by the Wulff shape of the crystal. These trends can be rationalized by the presence of twin defects that intersect particle edges and that may provide the kink sites necessary for interfacial propagation, thus leading to a more isotropic structure. While in many cases the interfacial velocity of Si solid-liquid interfaces is highly anisotropic, the presence of many defects leads to a highly mobile interface and diffusion-limited coarsening.

show abstract

Section: D Reconstructionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

et al. 2015

View full text Add to dashboard Cite

show abstract

“…In the model the fourfold symmetry of interface energy is assumed but both are in good agreement when the upper envelope of the experimental data is concerned. The values of linear kinetic coefficient for h100i and h111i faces of silicon have been obtained by numerical simulations 28,29) or experiments, [30][31][32] and most of the data for a (100) face of silicon are in the range from 0.2 to 0.05 m/sK. The value of linear kinetic coefficient for a Si-6 mass%Ni alloy is reported to be 0.01 m/sK 33) and it is supposed to becomes small with increase of solute content because the driving force for solute partition at interface would be necessary.…”

Section: Methodsmentioning

confidence: 99%

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

2007

View full text Add to dashboard Cite

Two-dimensional faceted crystal growth of silicon from undercooled melt of Si-20 mass%Ni alloy was experimentally investigated, in which a droplet sample from 10 to 100 mg was undercooled on a single-crystal sapphire and growing crystals were observed in situ. Observed crystals were classified according to the shapes of square, wedge and irregular shapes. The growth velocity was measured for different undercooling conditions. The growth velocity of square shaped crystals was about half times smaller than that of wedge shaped crystals. The growth of square shaped crystals is regarded to be two-dimensional and it is compared with the results of two-dimensional phase-field simulations. Growth velocity in both is in good agreement and the linear kinetic coefficient is estimated to be 0.002 m/sK.

show abstract

“…This feature makes our model slightly different with respect to conventional solid-on-solid models, which formally disallow vacancy formation in the bulk crystal. 12,14 In Fig. 3, a snapshot of the undercoordinated atoms, obtained after t = 2.613 ns of simulated evolution of an undercooled partially molten Si system ͑T = 1660 K͒, is shown.…”

Section: Atomistic Simulation Of Ultrafast Regrowth Phenomenamentioning

confidence: 99%

Vacancy generation in liquid phase epitaxy of Si

et al. 2007

View full text Add to dashboard Cite

Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystallization show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments.

show abstract

Monte Carlo modeling of silicon crystal growth

Cited by 83 publications

References 11 publications

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

Vacancy generation in liquid phase epitaxy of Si

Contact Info

Product

Resources

About