2004
DOI: 10.1063/1.1794893
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Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Abstract: We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission and tunneling injection are included in the model. Due to the barrier shape, the injected electrons are non-thermalized. Spin dynamics in the semiconductor heterostructure is controlled by the Rashba and Dresselhaus spinorbit interactions and described by a single electron s… Show more

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Cited by 20 publications
(35 citation statements)
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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] In large part, this interest is motivated by the goal to exploit these phenomena in new technologies, such as spintronics and quantum computation. 1 Recently, some attention has been focused on the problem of the extraction of spin-polarized electrons from the semiconductor to the ferromagnet.…”
mentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11][12][13] In large part, this interest is motivated by the goal to exploit these phenomena in new technologies, such as spintronics and quantum computation. 1 Recently, some attention has been focused on the problem of the extraction of spin-polarized electrons from the semiconductor to the ferromagnet.…”
mentioning
confidence: 99%
“…4 Understanding the properties of the systems discussed in this Brief Report is of great interest in the context of actively studied spin-injection/spinextraction processes at semiconductor/ferromagnet junctions. [4][5][6][7][8][9][10][11][12][13][14] We will be interested mainly in the process of spin extraction, where the electron flow is from the semiconductor into the half metal, which is especially interesting because of the recently predicted spin-blockade phenomenon in such junctions. 4,5 The physics of the spin blockade is the following: the half metal accepts electrons of only one-say upspin direction.…”
mentioning
confidence: 99%
“…[1][2][3][4] Most of the theoretical and experimental attention, so far, has been focused primarily on mechanisms of spin injection from the ferromagnet to the semiconductor, spin transport, and spin relaxation in semiconductors. [5][6][7][8][9][10][11][12][13][14][15][16] However, it is believed that a functional spintronic device 4 would involve not only injection of spin-polarized electrons from the ferromagnet to the semiconductor, but also the reverse process: the extraction of spin-polarized electrons from the semiconductor to the ferromagnet. Despite the apparent similarity with the injection process and recent experimental and theoretical progress in this area, [17][18][19][20][21][22] the physics of spin extraction has not been fully explored yet.…”
mentioning
confidence: 99%