Monte Carlo simulation for the electron cascade due to gamma rays in semiconductor radiation detectors

Narayan, R. D.; Miranda, R.; Rez, Peter

doi:10.1063/1.3698370

Cited by 10 publications

(8 citation statements)

References 52 publications

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“…This interaction has been described by Fröhlich [53] [54], and used by Fitting et al [55] in SiO 2 , Akkerman et al [56] in alkali halides, and Ganachaud et al [57] in Al 2 O 3 . Optical phonons have also been implemented in PENELOPE, though with a different formalism based on an integration of the ELF in the infrared range [58]. In the Fröhlich formalism, the scattering rates [s −1 ] for the absorption (-) or emission (+) of a LO phonon by an electron of energy are given by [59]…”

Section: Optical Phononsmentioning

confidence: 99%

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Gibaru

Inguimbert

Caron

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Section: Optical Phononsmentioning

confidence: 99%

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Gibaru

Inguimbert

Caron

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

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“…It is based on the mean free paths recently calculated by Akkerman et al [32]. The energy loss is taken equal to 0.05 eV for silicon [33]. No production of secondary electrons is considered during this interaction.…”

Section: Inelastic Mean Free Pathsmentioning

confidence: 99%

Ionizing Doses Calculations for Low Energy Electrons in Silicon and Aluminum

Pierron

Inguimbert

Belhaj

et al. 2017

IEEE Trans. Nucl. Sci.

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International audienceThe electron transport at low and very low energy (10 eV-2 keV) is investigated with a Monte Carlo (MC) code in silicon and aluminum. The elastic scattering with nuclei is described by Mott's model of partial waves, whereas the inelastic collisions with electrons are described by the complex dielectric function theory. Comparisons of MC simulations with electron emission yields (EEY) and energy loss spectra experimentally measured in ultrahigh vacuum on Ar-etched samples are given. The practical ranges and the ionizing dose calculations are presented down to 10 eV for electrons in silicon and aluminum. The simulation results show a correlation between the EEY and the ionizing doses. At low energy, while the electrons stay in the first ~10 nm from the surface due to the elastic scattering, the EEY increases and the ratio of the ionizing dose over the incident energy decreases. Above 200 eV, when the electrons go deeper into the solid due to the inelastic scattering, the EEY decreases and the ionizing dose ratio increases

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“…40,41) The developed cross-sections did not take this effect into account. Since the threshold energy value is still under discussion, [42][43][44] we variably set this value as the cutoff energy.…”

Section: T R a N S D E P R E Lmentioning

confidence: 99%

Implementation of the electron track-structure mode for silicon into PHITS for investigating the radiation effects in semiconductor devices

Hirata¹,

Kai²,

Ogawa³

et al. 2022

Jpn. J. Appl. Phys.

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In order to elucidate the mechanism of radiation effects in silicon (Si) devices, such as pulse-height defects and semiconductor soft errors, we developed an electron track-structure model dedicated to Si and implemented it into Particle and Heavy Ion Transport code System (PHITS). Then, we verified the accuracy of our developed model by comparing the ranges and depth–dose distributions of electrons in Si obtained from this study with corresponding experimental values and other simulated results. As an application of the model, we calculated the mean energies required to create an electron–hole pair in crystalline Si. Our calculated result agreed with the experimental data when the threshold energy for generating secondary electrons was set to 2.75 eV, consistent with the corresponding data deduced from past studies. This result suggested that the improved PHITS can contribute to the precise understanding of the mechanisms of radiation effects in Si devices.

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Monte Carlo simulation for the electron cascade due to gamma rays in semiconductor radiation detectors

Cited by 10 publications

References 52 publications

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Ionizing Doses Calculations for Low Energy Electrons in Silicon and Aluminum

Implementation of the electron track-structure mode for silicon into PHITS for investigating the radiation effects in semiconductor devices

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