Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices

Abstract

A band-to-band tunneling model including trap-assisted tunneling has been implemented in our ensemble full band Monte Carlo simulator. Four kinds of band-to-band tunneling mechanisms are taken into account. All the parameters in the band-toband tunneling model are verified by comparing the pn junction reverse current with the experimental data. Then, gateinduced-drain-leakage currents caused by band-to-band tunneling in a 45 nm gate length n-metal-oxide-semiconductor fieldeffect-transistor are investigated. Results indicate that band-to-band tunneling can cause additional hot holes which becomes an important issue for the device reliability. Moreover, The gate-induced-drain-leakage currents caused by band-to-band tunneling in parallel with Si/SiO 2 interface and normal to Si/SiO 2 interface are compared. The influence of drain voltage on the two components of the gate-induced-drain-leakage currents is considered.

Understanding and optimizing the floating body retention in FDSOI UTBOX

“…The holes flow to the body whereas the electrons go to the junctions. The BBT generation rate (G BBT ) is simulated using the expression (2) [13,14].…”

Preparation and performance of nano‐SiO2 stabilized Pickering emulsion type sizing agent for glass fiber

“…Increasing the addition of nano-SiO 2 made the surface of oil droplets covered and saturated by SiO 2 particles gradually. When emulsion droplets touched each others, the "solid matter shell" could keep the oil phase separating [25]. The redundant nano-SiO 2 particles existing in water phase would connect into a three-dimensional reticular structure, which helped to hinder the oil particles from closing to each other, as shown in Fig.…”

Comparison of band-to-band tunneling models in Si and Si—Ge junctions

“…Hence, the accuracy of BTBT models in Si-Ge hetero-junctions is critical to investigate the performance of these devices. However, few works so far have discussed this issue OE8; 9 .…”