Monte Carlo simulation of electromigration phenomena in metallic lines

Pennetta, C.; Reggiani, L.; Alfinito, Eleonora

doi:10.1016/s0378-4754(02)00221-5

Cited by 2 publications

(2 citation statements)

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“…Early stage results has been presented in Refs. [ 28,38]. In this article, we present a comprehensive study which includes many fundamental new features.…”

Section: Introductionmentioning

confidence: 99%

Biased resistor network model for electromigration failure and related phenomena in metallic lines

et al. 2004

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Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black's law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

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“…Early stage results has been presented in Refs. [ 28,38]. In this article, we present a comprehensive study which includes many fundamental new features.…”

Section: Introductionmentioning

confidence: 99%

Biased resistor network model for electromigration failure and related phenomena in metallic lines

et al. 2004

Self Cite

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“…[2][3][4][5][6][7][8][9] Heterogeneous void nucleation followed by migration towards the cathode end has been directly observed by in situ scanning electron microscopy ͑SEM͒ observations. [12][13][14] However, the relative contribution of the Cu/cap interface as opposed to the Cu/cap/liner edges has not been studied. [12][13][14] However, the relative contribution of the Cu/cap interface as opposed to the Cu/cap/liner edges has not been studied.…”

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confidence: 99%

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

Shao

Mhaisalkar

Sritharan

et al. 2007

Applied Physics Letters

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In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.

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Monte Carlo simulation of electromigration phenomena in metallic lines

Cited by 2 publications

References 15 publications

Biased resistor network model for electromigration failure and related phenomena in metallic lines

Biased resistor network model for electromigration failure and related phenomena in metallic lines

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

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