2008
DOI: 10.1007/s11082-008-9238-1
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Monte Carlo simulation of excess noise in heterojunction avalanche photodetector

Abstract: A Monte Carlo (MC) simulation of excess noise in heterojunction avalanche photodetector (APD), made up of InP/InGaAs, is made. The simulation is based on the hard threshold dead space consideration in the displaced exponential model of the distribution of ionization path lengths. Impact ionization and multiplication of electrons as function of ionizing electric field are also studied. The multiplication and noise are seen to be reduced compared to those in component materials. The simulated results are seen to… Show more

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Cited by 4 publications
(2 citation statements)
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“…Recently, Ghosh et.al. (Ghosh & Ghosh, 2008) used the ABMC method to study and calculate the excess noise in heterojunction APDs. The ABMC simulation is based on the hard threshold dead space effect in the displaced exponential model of distribution of random ionizing path lengths.…”
Section: Avalanche Noisementioning
confidence: 99%
See 1 more Smart Citation
“…Recently, Ghosh et.al. (Ghosh & Ghosh, 2008) used the ABMC method to study and calculate the excess noise in heterojunction APDs. The ABMC simulation is based on the hard threshold dead space effect in the displaced exponential model of distribution of random ionizing path lengths.…”
Section: Avalanche Noisementioning
confidence: 99%
“…The ABMC simulation is based on the hard threshold dead space effect in the displaced exponential model of distribution of random ionizing path lengths. In the present article, the author puts forward a report of their study (Ghosh & Ghosh, 2008) of excess noise in heterojunction avalanche photodetector by Monte Carlo simulation. The MC simulation attracts much attention as it can investigate a device operation mechanism through carrier distribution dynamics and potential distribution profile.…”
Section: Avalanche Noisementioning
confidence: 99%