Monte Carlo simulation of GaAs(0 0 1) surface smoothing in equilibrium conditions

Kazantsev, D M; Akhundov, I. O.; Karpov, Alexander N.; Shwartz, Nataliya L.; Alperovich, V. L.; Терехов, А. С.; Латышев, А. В.

doi:10.1016/j.apsusc.2015.01.226

Cited by 20 publications

(10 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Earlier, it was found that, under annealing in the temperature range of 650 °C-775 °C, in the conditions that were supposed to provide near-equilibrium between the GaAs surface and the vapors of Ga and As, kinetically driven roughening still occurred, presumably, due to deviations from the equilibrium towards sublimation or growth [23][24][25][26]. The results of the experiment that support this suggestion are presented in figure 1 [25,27].…”

Section: Introductionmentioning

confidence: 67%

“…Kinetic Monte Carlo simulations were done in the model of one-component cubic lattice [24,31]. In this model, complex atomic rearrangements and mass transfer on a reconstructed GaAs(001) surface are replaced by random walks and attachment/detachment of atoms between sites of the cubic crystal lattice.…”

Section: Methodsmentioning

confidence: 99%

“…It was suggested in [23][24][25][26] that the qualitative difference in the relief of the open and capped samples is due to the deviations of the equilibrium conditions towards sublimation and growth, respectively. In particular, under sublimation, the islands originate from surface spots at which the sublimation is suppressed.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Kazantsev¹,

Akhundov²,

Кожухов³

et al. 2023

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

We present the results of GaAs annealing experiments in the conditions near equilibrium, which clarify the reasons of the transition from surface smoothing to roughening at temperatures above 650°C. The roughening is due to kinetic instabilities arising under deviation of annealing conditions towards growth or sublimation. These instabilities reveal themselves in appearing islands (for sublimation) and pits (for growth) of multilayer heights and depths, respectively. The islands and pits appear due to the motion of atomic steps through surface spots, at which sublimation and growth are suppressed. Pinning of the steps at these spots also lead to step bunching at surfaces with sufficiently small terrace widths. This explanation is consistent with Monte Carlo simulations of atomic processes on the GaAs surface. The similarity and distinctions in surface roughening under sublimation and growth, along with the role of Schwöbel barrier, are discussed. Annealing experiments in the cavities, which are formed by GaAs substrates with well-controlled atomic step densities enabled us to clarify the roughening mechanisms and to improve the efficiency of GaAs thermal smoothing technique by increasing smoothing temperature up to 775°C.

show abstract

Section: Introductionmentioning

confidence: 67%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Kazantsev¹,

Akhundov²,

Кожухов³

et al. 2023

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

show abstract

“…41 We emphasize that the softening of the step shape takes place when the surface becomes less rough; that is, the film tends to be neater in each of its components: planes and steps (2D and 1D, respectively). 42,43 Furthermore, the decrease in the step fractal dimension suggests the presence of non-negligible diffusion along the steps, 42,43 although a detachment/reattachment mechanism of molecules between the surface and solution cannot be excluded. A small deviation is put into evidence in Figure 7 (colored oval), corresponding to the increase in tortuosity as pointed out in the fourth and fifth rims of Figure 6b.…”

Section: Resultsmentioning

confidence: 99%

Growth of Corrole Films from Solution: A Nanometer-Scale Study at the Real Solid–Liquid Interface

et al. 2021

View full text Add to dashboard Cite

The self-assembly of corrole molecules dissolved in ethanol and then adsorbed onto an immersed Au(111) surface was investigated by scanning tunneling microscopy (STM) at the solution−solid interface. The physisorption and the subsequent organization of the molecules in multilayers were followed as a function of time at two concentrations, differing by about a factor of 500. In both cases, molecules adsorb flat on the gold surface. For the low concentration, we demonstrate that the first disordered phase is followed, rather abruptly, by a more ordered one, essentially composed of extremely smooth layers of molecules. Even the sharp and winding steps, which mark the layers, describe an evolution toward order. In fact, their rims tend to flatten out, as testified by the decrease in time of their fractal dimension. In the case of high concentration, we have monitored the kinetics of coverage, showing that its evolution for the uppermost layer can be described by Langmuirian kinetics, which provides the adsorption and desorption rate constants, k a = (20.7 ± 1.6) L/(mol s) and k d = (6.5 ± 0.1) × 10 −4 s −1 .

show abstract

“…The desorption was neglected in agreement with the relatively low temperature of our experiments (close to or lower than room temperature). The computer program used earlier [26] was further developed in order to speed up the calculations. In particular, a reverse calculation algorithm was introduced.…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

et al. 2019

Self Cite

View full text Add to dashboard Cite

Monte Carlo simulation of GaAs(0 0 1) surface smoothing in equilibrium conditions

Cited by 20 publications

References 17 publications

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Growth of Corrole Films from Solution: A Nanometer-Scale Study at the Real Solid–Liquid Interface

Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

Contact Info

Product

Resources

About