Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal

Abstract

The novel one-particle Monte Carlo procedure for the simulation of the longitudinal optical phonon distribution accumulation generated by electrons in a high electric field is presented in detail. The phonon and electron distributions are obtained employing novel code in zinc-blend n-type GaN crystals. The main quality of this code is the avoidance of the short-time-step procedure appropriate to the conventional ensemble Monte Carlo method. The maximum value of the phonon distribution function dramatically exceeds the thermal-equilibrium one. The influence of the phonon accumulation on the electron kinetic characteristics of zinc-blend GaN and other features, such as longitudinal optical phonon number inversion with respect to acoustic phonon modes, are discussed.

Redshift ofA1(longitudinal optical) mode for GaN crystals under strong electric field

“…Consequently, exploring the LO phonon property is crucial for understanding GaN, particularly under nonequilibrium conditions. 12) However, the majority of previous studies employed calculations; [13][14][15] there is a lack of experimental data in high-electric field study.…”