Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

Íñiguez-de-la-Torre, I.; González, T.; Rodilla, Helena; Vasallo, B. G.; Matéos, J.

doi:10.5772/15863

Cited by 4 publications

(3 citation statements)

References 60 publications

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“…The previous results demonstrate the good performance of SSDs acting as a heterodyne receiver system, which can be significantly improved simply by optimizing (i) the antenna design and the coupling between the RF and LO signals to the SSD by the help of Si-lens and (ii) the external connections (mainly by improving the access losses and the large impedance mismatch with our highly resistive devices (35 k for one SSD)), thus being possible to envisage the fabrication of a heterodyne detection system with an IF signal at much higher frequencies, above 100 GHz, paving the way for applications such as ultra-high data-rate wireless transmission. Additionally, the intrinsic design of the SSD can also be improved by (i) decreasing the channel length and (ii) using high-mobility semiconductors such as InGaAs or InAs, which raises the intrinsic cut-off frequency of the SSDs [18], thus making possible the increase of both the frequency of the carrier signals and the bandwidth of the heterodyne receiver.…”

Section: Discussionmentioning

confidence: 99%

Nonlinear nanochannels for room temperature terahertz heterodyne detection

Torres

Nouvel

Penot

et al. 2013

Semicond. Sci. Technol.

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The potentialities of AlGaN/GaN nanochannels with broken symmetry (also called self-switching diodes) as direct and heterodyne THz detectors are analyzed. The operation of the devices in the free space heterodyne detection scheme have been measured at room temperature with RF up to 0.32 THz and explained as a result of high-frequency nonlinearities using Monte Carlo simulations. Intermediate-frequency bandwidth of 40 GHz is obtained.

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Section: Discussionmentioning

confidence: 99%

Nonlinear nanochannels for room temperature terahertz heterodyne detection

Torres

Nouvel

Penot

et al. 2013

Semicond. Sci. Technol.

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“…In addition to the foregoing, the MC method could also be applicable to electronic as well as light-emitting devices and lasers, where non-equilibrium charge transport and selfheating effects may also be important [16]. In this paper we use an in-house ensemble MC tool self-consistently coupled with a two-dimensional (2D) Poisson solver [17] that allows for an accurate electric current modeling of different kinds of devices [18][19][20]. Semiconductors are modeled by three nonparabolic spherical valleys for the conduction band, whose main parameters can be found in [20,21].…”

Section: Electron Transport Methods and Device Structurementioning

confidence: 99%

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

Garcia

Íñiguez-de-la-Torre

Garcia-Perez

et al. 2015

Semicond. Sci. Technol.

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In this contribution we present the results from the simulation of an AlGaN/GaN heterostructure diode by means of a Monte Carlo tool where thermal effects have been included. Two techniques are investigated: (i) a thermal resistance method (TRM), and (ii) an advanced electro-thermal model (ETM) including the solution of the steady-state heat diffusion equation. Initially, a systematic study at constant temperature is performed in order to calibrate the electronic model. Once this task is performed, the electro-thermal methods are coupled with the Monte Carlo electronic simulations. For the TRM, several values of thermal resistances are employed, and for the ETM method, the dependence on the thermal-conductivity, thickness and die length is analyzed. It is found that the TRM with well-calibrated values of thermal resistances provides a similar behavior to ETM simulations under the hypothesis of constant thermal conductivity. Our results are validated with experimental measurements finding the best agreement when the ETM is used with a temperature-dependent thermal conductivity.

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“…[71][72][73] ballistic deflection transistors (BDTs) 74 and even SSDs 75 , all based on InAlAs/InGaAs layers; the comparison of the results with experimental measurements providing a very satisfactory agreement. 76 The calculations in this thesis will make use of this model in GaN diodes for the first time.…”

Section: I3 Gan From the Semiconductor To The Devicementioning

confidence: 99%

Nanodispositivos de GaN para generación de señales de THz. Simulación Monte Carlo y análisis experimental

Torre¹

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GHz and 10 THz (what is equivalent to wave lengths between 3 mm and 30 μm) are typically referred as the terahertz gap, and, as observed in Figure 1, they are placed just between the regions exploited by electronics and photonics. as sources of lower-frequency signals, use resonant-tunneling diodes (RTDs), Gunn diodes and IMPATT (IMPact ionization Avalanche Transit Time) diodes, and oscillators based on both HBTs (Heterojunction Bipolar Transitors) and HEMTs (High-Electron Mobility Transistors). The last approach is related to optoelectronics, in which the most common systems used to this end, even if they are quite bulky, are the electron velocity in the material and the operation frequency. And secondly, the limited demand of these devices till ten years ago, since their applications were restricted nearly exclusively to so specialized fields like molecular spectroscopy and radioastronomy. However, with the new millennium important applications of THz signals have emerged, as previously mentioned, in fields like defense, telecommunications, identification of chemical composites and biological substances, etc. f v / f D. The solution from solid-state electronics Electronic transport processes determine the basic principles of operation of most semiconductor devices and, what is more, they establish the relevant device properties of nearly all devices of interest in high-speed electronics. Thus, advanced phonon emission (OPTTR, Optical Phonon Transit Time Resonance) 21-23 and (ii) Gunn oscillations 24-26 in nanometric Self-Switching Diodes (SSDs). 27 emission, coupled in quasi-ballistic regime to the plasma frequency of the active region of a semiconductor diode. In a resumed way, the idea is to take advantage of the periodic carrier dynamics originated by optical phonon emission when a constant voltage is applied to the device. The carriers, accelerated by the electric field, move ballistically till gaining the energy corresponding to an optical phonon, that they immediately emit, and then repeat the acceleration/emission cycle. This cyclic

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Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

Cited by 4 publications

References 60 publications

Nonlinear nanochannels for room temperature terahertz heterodyne detection

Nonlinear nanochannels for room temperature terahertz heterodyne detection

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

Nanodispositivos de GaN para generación de señales de THz. Simulación Monte Carlo y análisis experimental

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