Monte Carlo simulation of semiconductor devices

Jensen, Geir Uri; Lund, B.; Fjeldly, Tor A.; Shur, M. S.

doi:10.1016/0010-4655(91)90220-f

Cited by 32 publications

(8 citation statements)

References 171 publications

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“…In contrast, as the transient electron simulations occur over a shorter period of time, a larger number of electrons are required in order for the error to be sufficiently low; for our specific case, ten-thousand electrons is observed to work well for the transient electron transport simulations. Further details, related to this issue, are presented in the analysis of Jensen et al [221].…”

Section: Steady-state Electron Transport Within Wurtzite Ganmentioning

confidence: 97%

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A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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Section: Steady-state Electron Transport Within Wurtzite Ganmentioning

confidence: 97%

“…Copyright permission was obtained from Springer. The online version of this figure is depicted in color [221]. 21 For our simulations, the crystal temperature is set to 300 K and the doping concentration is set to 10 17 cm À3 for all cases, unless otherwise specified.…”

Section: Our Monte Carlo Simulation Approachmentioning

confidence: 99%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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“…By means of Monte Carlo simulations, we found that with a linear variation in the threshold voltage from source to drain, a speed gain of about 30 % could be achieved in p-channel HFETs. A correspondingly large improvement was not possible in n-channel HFETs owing to effects related to electron transfer to heavier satellite valleys in the energy bands [2], [3]. However, improvements have been observed in asymmetrically doped n-channel MOSFETs [4].…”

Section: Introductionmentioning

confidence: 99%

“…Previously, we investigated the merits of such a strategy in GaAdAlGaAs HFETs [2], 131, where the disparity between p -and n-channel devices is even more pronounced than for Si MOSFETs. By means of Monte Carlo simulations, we found that with a linear variation in the threshold voltage from source to drain, a speed gain of about 30 % could be achieved in p-channel HFETs.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced p-MOSFET performance by channel field redistribution

Fjeldly

Ballangrud

Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th A

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We discuss how the performance of pchannel MOSFETs can be improved by introducing a variable threshold voltage along the conducting channel. The threshold voltage variation is designed to increase the charge carrier concentration near the drain, thereby increasing the saturation voltage and the saturation current, and improving the device speed. The effect was demonstrated experimentally by subjecting p-MOSFETs to high-bias stress, which creates a step-variation in the threshold voltage near drain. We also developed device models for pMOSFETs with linearly variable threshold, and predict that more than 40 % speed gain may be achieved in some cases.

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