Monte Carlo simulation of short channel heterostructure field-effect transistors

Jensen, Geir Uri; Lund, B.; Fjeldly, Tor A.; Shur, M. S.

doi:10.1109/16.75214

Cited by 23 publications

(5 citation statements)

References 34 publications

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“…Usually Monte Carlo (MC) simulations of MESFETs and HEMTs only consider the transport and electric field in the semiconductor [4][5][6][7][8] (taking as boundary conditions the reflection of the carriers and zero normal electric field at the limits of the simulation domain). Even if the dielectric is taken into account in some works [9,10], it is not enough, since the head of the T-gate provokes a capacitive coupling between gate and semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

Matéos¹,

González²,

Pardo³

et al. 1999

Semicond. Sci. Technol.

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A microscopic study of 0.1 µm recessed gate δ-doped AlInAs/GaInAs HEMTs has been performed by using a semiclassical Monte Carlo device simulation. The geometry and layer structure of the simulated HEMT is completely realistic, including recessed gate and δ-doping configuration. The usual T-gate technology is used to improve the device characteristics by reducing the gate resistance. For first time we take into account in the Monte Carlo simulations the effect of the T-gate and the dielectric used to passivate the device surface, which affects considerably the electric field distribution inside the device. The measured I d -V ds characteristics of a real device are favourably compared with the simulation results. When comparing the complete simulation with the case in which Poisson equation is solved only inside the semiconductor, we find that even if the static I -V characteristics remain practically unchanged, important differences appear in the dynamic and noise behaviour, reflecting the influence of an additional capacitance.

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Section: Introductionmentioning

confidence: 99%

Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

Matéos¹,

González²,

Pardo³

et al. 1999

Semicond. Sci. Technol.

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“…Ohmic boundary conditions [26] are considered at the drain and source contacts, with non-uniform profiles of potential and electron concentration (as if real top electrodes were used) [27,28]. The gate Schottky contact allows carriers to leave the device, but it does not inject them.…”

Section: Monte Carlo Simulatormentioning

confidence: 99%

Monte Carlo modelling of noise in advanced III–V HEMTs

et al. 2014

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One of the main objectives of modern Microelectronics is the fabrication of devices with increased cutoff frequency and decreased level of noise. At this moment, the best devices for high-frequency, low-noise behavior are High electron mobility transistors (HEMTs) based on InGaAs and InAs channels. In this work, a complete analysis of ultrashort-gate HEMTs has been carried out by using a semiclassical Monte Carlo simulator, paying special attention to the noise performance. The validity of the model has been checked through the comparison of the simulated results with static, dynamic and noise measurements in real HEMTs. In order to reproduce the experimental results, we have included in the model some important real effects such as degeneracy, surface charges, presence of dielectrics and contact parasitics. The cryogenic performance of the HEMTs has also been analyzed. The influence of the parasitic resistances, width of the devices, value of the δ-doping and recess length has been analyzed when scaling down the gate length of the transistors to 50 nm aiming at achieving higher cutoff frequencies and better noise performance. The important effect of the impact ionization mechanisms and the consequent kink effect on the noise in both InGaAs and InAs based HEMTs have also been studied. Finally the advantages of the use of a double gate topology are quantified.

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“…Ensemble Monte-Carlo (EMC) code have been introduced to follow the motion ofan ensemble of electrons, typically several thousands, simultaneously inside bulk materials [30][31][32][33]. Later, EMC codes found a wide range of application in the simulation of semiconductor devices ( fig.1) in one-dimension and two-dimensions [34][35][36][37][38].…”

Section: Semiconductor Device Modelingmentioning

confidence: 99%

On the accuracy and computational efficiency of physical simulators used for characterizing ultra-small gate-length FETs

Abou‐Elnour

2003

SPIE Proceedings

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A rigorous two-dimensional physical device simulator is developed to characterize the operation ofultra-small and highly doped semiconductor devices. To allow a better understanding ofthe device behavior, the physical phenomena which are taking place inside these devices are accurately modeled and included in the simulator. Implicit and explicit numerical schemes are applied to self-consistently solve the model equations and the effects ofboth schemes on the computational efficiency of the simulator are discussed. Finally, the obtained results from the simulator are compared with experimental characteristics ofa device with similar structure.

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Monte Carlo simulation of short channel heterostructure field-effect transistors

Cited by 23 publications

References 34 publications

Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

Monte Carlo modelling of noise in advanced III–V HEMTs

On the accuracy and computational efficiency of physical simulators used for characterizing ultra-small gate-length FETs

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