Monte Carlo simulation of silicon nanocrystal formation in the presence of impurities in a SiN x matrix

Modeling and Control of SiNX Thin Film Surface Morphology Using Kinetic Monte Carlo Method

“…Recently, considerable attention has been devoted to silicon nanocrystals (Si-nc) from both the experimental and the theoretical perspectives [1][2][3][4] , due to its potential nanoelectronic and optoelectronic device applications as well as their interesting physical properties. Many researchers have investigated the production of the light emission from Si-nc embedded in silicon (Si) oxide films [5,6] .…”

“…In general, there are two methods used for the formation of silicon nanocrystals, one is the crystallization of nitrogen doped silicon (SiN x ) films [3] and the other is direct deposition [7] . Various fabrication techniques, such as plasma-enhanced chemical vapor deposition (PECVD) [2,8] , low-pressure chemical vapor deposition (LPCVD) [4] , and catalytic chemical vapor deposition (Cat-CVD) [1] have been examined for the fabrication of Si-nc in SiN x thin films with different silicon sources; i.e.…”