Monte Carlo Simulation of Spin Polarized Transport in Nanowires and 2-D Channels of III–V Semiconductors

Nimje, Swetali; Sharma, Ashutosh; Salimath, Akshaykumar; Ghosh, Bahniman

doi:10.1166/qm.2015.1244

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2017

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“…The Rashba spin-orbit interaction parameter α was calculated and it is equal to α = 1.66 × 10 −12 eV m which is in good line with literature data for GaSb nanowires 3 × 10 −12 eV m [ 29 ]. A consequence of the emergence of large Rashba field is the possibility to polarize flowing electron along the direction of this field.…”

Section: Discussionsupporting

confidence: 82%

Properties of Doped GaSb Whiskers at Low Temperatures

et al. 2017

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Temperature dependencies of GaSb whiskers’ resistance doped with Te to concentration of 1.7 × 1018 cm−3 were measured in temperature range 1.5–300 K. At 4.2 K temperature, a sharp drop in the whisker resistance was found. The observed effect is likely connected with the contribution of two processes such as the electron localization in the whiskers and transition in superconducting state at temperature below 4.2 K. The whisker magnetoconductance is considered in the framework of weak antilocalization (WAL) model and connected with subsurface layers of the whiskers. The Shubnikov-de Haas (SdH) oscillatory effect is observed in high-quality n-type GaSb whiskers with tellurium doping concentration near the metal-insulator transition (MIT) for both longitudinal and transverse magnetoresistance.

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Section: Discussionsupporting

confidence: 82%