Monte Carlo simulation of symmetric and asymmetric double-gate MOSFETs using bohm-based quantum correction

Wu, Bo; Tang, Ting-Wei; Nam, Joonwoo; Tsai, Jyun-Hwei

doi:10.1109/tnano.2003.820785

Cited by 20 publications

(6 citation statements)

References 14 publications

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“…For further miniaturization of the DG-MOSFET, quantum effects should also be considered. 8,12) In a case of a channel thickness of less than 3 -5 nm, the potential in the channel is increased by quantization in the direction of the channel thickness. It is considered that the rate of backscattering from the drain region is suppressed by this quantum effect.…”

Section: Discussionmentioning

confidence: 99%

“…In recent years, a double-gate MOSFET (DG-MOSFET) has been intensively researched. 8,12) The DG-MOSFET is one of the most promising candidates for future decanano devices in the ITRS roadmap. Therefore, we aim to study the suppression of the backscattering phenomenon from the drain region on the electrical characteristics of a decanano DG-MOSFET.…”

Section: Introductionmentioning

confidence: 99%

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Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics

Tsutsumi

Tomizawa

2008

jjap

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We have confirmed for the first time that backscattering from a drain region can markedly be suppressed by increasing the drain thickness of a decanano device. We have also investigated the effects of the backscattering phenomenon on the silicon decanano double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) characteristics. Ensemble Monte Carlo simulation is performed for our numerical experiment. Even if the rate of backscattering from the drain region decreases rapidly with increasing drain thickness, drain current increases only gradually. This gradual increase in drain current is due only to a rapid decrease in drain resistance. The backscattering phenomenon hardly affects DC characteristics, such as drain current. Moreover, when a small incremental change in backscattering rate decreases rapidly with increasing drain thickness, cutoff frequency increases markedly. This marked increase in cutoff frequency is due to both the rapid decrease in drain resistance and the rapid decrease in the small incremental change in backscattering rate. In paricular, the suppression of the backscattering phenomenon markedly improves AC characteristics, such as cutoff frequency. We believe that it becomes more important to analyze the backscattering phenomenon from the drain region along with miniaturization of such a decanano device.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics

Tsutsumi

Tomizawa

2008

jjap

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“…Consequently, the WMC technique is found to be a more accurate quantum tool than quantum-corrected MC techniques, which can represent only the lowest-quantized subband via smoothed effective potential. [2][3][4][5]…”

Section: Description Of Higher-order Quantized Subbandsmentioning

confidence: 99%

“…1 However, as quantum effects become more and more important with continued downscaling, the semiclassical approach based on the BTE fails to describe the carrier transport accurately. Quantum effects are often incorporated in conventional MC simulation by considering quantum corrections, [2][3][4][5] which represent repulsive force from interface and tunneling through potential barrier in terms of "smoothed effective potential," while they keep threedimensional ͑3D͒ description of particles.…”

Section: Introductionmentioning

confidence: 99%

Quantum transport simulation of nanoscale semiconductor devices based on Wigner Monte Carlo approach

Koba

Aoyagi

Tsuchiya

2010

Journal of Applied Physics

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In this paper, we present quantum transport simulation of nanoscale semiconductor devices based on Wigner Monte Carlo ͑WMC͒ approach. We have found that the WMC approach can accurately handle higher-order quantized subbands, tunneling, quantum reflection, and decoherence processes occurring in nanoscale semiconductor devices. Furthermore, we have demonstrated that carrier quantum transport in source electrode plays an important role in devices extremely downscaled into the nanometer regime.

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“…In recent years, the DG-MOSFET has been intensively studied. 8,13) We have investigated backscattering effect from the drain region of the future decanano DG-MOSFET from the point of view of electrical device characteristics, and a method of suppressing the backscattering was proposed in our previous work. 11) The backscattering phenomenon from the drain region can largely be suppressed by increasing the drain thickness.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Tsutsumi

Tomizawa

2009

jjap

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We have analyzed quantum effects on backscattering from the drain region of a silicon decanano double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) using a Monte Carlo simulation. A backscattered (BS) rate with a full quantum effect is larger than that in the classical case. To investigate the causes, we have separated the full quantum effect into a subband energy effect and a twodimensional electron gas (2DEG) transport effect. It is confirmed that the main cause of the increase in BS rate caused by the full quantum effect is the 2DEG transport effect. The 2DEG transport effect causes an electron distribution concentration on the center of the channel thickness, an increase in scattering rate at the drain edge and in the channel, and a tendency of the BS electrons to diffuse toward the source in the channel. Furthermore, we confirmed that the subband energy effect contributes greatly to the increase in BS rate caused by the full quantum effect in a channel as thin as 2 nm. The subband energy effect causes a strong tendency of the BS electrons to diffuse toward the source in the very thin channel. The contribution to the increase in BS rate of the subband energy effect, in addition to that of the 2DEG transport effect, becomes large when the channel is very thin. #

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Monte Carlo simulation of symmetric and asymmetric double-gate MOSFETs using bohm-based quantum correction

Cited by 20 publications

References 14 publications

Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics

Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics

Quantum transport simulation of nanoscale semiconductor devices based on Wigner Monte Carlo approach

Analysis of Quantum Effects on Backscattering from Drain Region of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

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