AIP Conference Proceedings
 2013
DOI: 10.1063/1.4848447
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Monte Carlo simulation of THz frequency range Gunn effect in InP MOSFET at impact ionization conditions

Steponas Ašmontas1,
V. Gruz̆inskis2,
P. Shiktorov3
et al.

Abstract: Results of Monte Carlo simulation of InP MOSFET performance under impact ionization in the conducting channel are presented. The drain current oscillations up to 0.5 THz frequency due to Gunn effect are demonstrated.

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