Monte Carlo simulations of double-gate MOSFETs

Kathawala, G.; Winstead, B.; Ravaioli, Umberto

doi:10.1109/ted.2003.819699

Cited by 51 publications

(32 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A quantum correction based on the Schrdinger equation has been recently applied to MC device simulation [5][6][7]. In this Schrödinger-corrected Monte Carlo (SCMC) method, the quantum correction potential V qc (y) is determined by…”

Section: Discussionmentioning

confidence: 99%

The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation

Tang

2004

J Comput Electron

View full text Add to dashboard Cite

To include quantum effects, a quantum correction is made to the semi-classical Monte Carlo (MC) simulation by the effective conduction band edge (ECBE) method. The quantum corrected potential energy can be calculated from the classical potential energy by the ECBE equation and thus the quantum mechanical force in the simulation replaces the classical force. Under the non-equilibrium condition, carriers have a temperature different from the lattice. For the simulation of a double-gate MOSFET, we replace thermal energy in the ECBE equation with the average value of the stress tensor along each transverse line, to account for the variation of the electron "temperature" along the longitudinal direction. A 3 nm thick double gate nMOSFET is simulated. The result shows that electrons now see a higher barrier from the source to the drain if the carrier temperature is considered, resulting in a smaller drain current compared to that obtained from the previous ECBE method.

show abstract

Section: Discussionmentioning

confidence: 99%

The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation

Tang

2004

J Comput Electron

View full text Add to dashboard Cite

show abstract

“…The concept of quantum correction potentials opens the way for using particle-based Monte Carlo methods to investigate transport in systems with strong size quantization. Therefore, the full power of three-dimensional full-band Monte Carlo methods which include accurate band-structure and scattering processes to obtain transport characteristics in inversion layers and SOI structures can be applied [8,121]. Recently, mobility of stressed Si/SiGe inversion layers was investigated [122][123][124].…”

Section: Quantum Correction Potential Density Gradient and Quantum mentioning

confidence: 99%

Current transport models for nanoscale semiconductor devices

Sverdlov

Ungersboeck

Kosina

et al. 2008

Materials Science and Engineering: R: Reports

View full text Add to dashboard Cite

“…This has been compensated for in other studies by treating the contact regions classically [13], or via the use of a modified reservoir technique [14]. Here, simulations of a double gate (DG) MOSFET have been carried out, as shown in Fig.…”

Section: Density Gradient Quantum Correctionsmentioning

confidence: 99%

Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations

et al. 2008

View full text Add to dashboard Cite

Monte Carlo remains an effective simulations methodology for the study of MOSFET devices well into the decananometre regime as it captures non-equilibrium and quasi-ballistic transport. The inclusion of quantum corrections further extends the usefulness of this technique without adding significant computational cost. In this paper we examine the impact of boundary conditions at the Ohmic contacts when Density Gradient based quantum corrections are implemented in a 3D Monte Carlo simulator. We show that Neumann boundary conditions lead to more stable and physically correct simulation results compared to the traditional use of Dirichlet boundary conditions.

show abstract

Monte Carlo simulations of double-gate MOSFETs

Cited by 51 publications

References 16 publications

The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation

The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation

Current transport models for nanoscale semiconductor devices

Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations

Contact Info

Product

Resources

About