Monte Carlo simulations of hole transport in 4H-SiC using DOS calculations

Abstract

In this article we show results of 4H-SiC Monte Carlo simulation of hole transport based on numerically calculated density of states. As a result of these simulations the hole mobility for low electric field is obtained. To properly include scattering on ionized acceptor dopants the Brooks-Herring and Conwell-Weisskopf models are used.