Monte Carlo simulator for the design optimization of low-noise HEMTs

Matéos, J.; González, T.; Pardo, D.; Hoel, Virginie; Cappy, A.

doi:10.1109/16.870579

Cited by 103 publications

(89 citation statements)

References 23 publications

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“…No other quantum effects are considered in the simulation in order to have reasonable CPU times. The validity of this approach, especially under high-field conditions, and that of the whole MC model has been confirmed in previous works [4]. In order to detect the presence of ultrafast Gunn oscillations, special attention is devoted to the calculation of the current noise spectra due to their extreme sensitivity to microscopic features of carrier dynamics and the possibility to easily perform a frequency analysis of the electrical fluctuations.…”

Section: Device Topology and Monte Carlo Approachmentioning

confidence: 96%

“…The layer structure of the simulated slot diodes is similar to that used for the fabrication of InP-based HEMTs [1,4]: a 10 nm InGaAs cap layer, heavily doped with N D = 6 × 10 18 cm −3 , followed by a 10 nm In 0.52 Al 0.48 As barrier layer, a δ-doping layer of 6 × 10 12 cm −2 and a 3 nm undoped In 0.52 Al 0.48 As spacer, to continue with a 15 nm In 0.70 Ga 0.30 As channel placed over a 200 nm InAlAs buffer. The geometry of the device that we will use as a reference (Fig.…”

Section: Device Topology and Monte Carlo Approachmentioning

confidence: 99%

“…In this contribution we propose a source of terahertz radiation obtained from an ultrafast Gunn-like effect happening in recessed InGaAs/InAlAs heterostructures in which high electron mobility transisitors (HEMTs) are based [1,2]. From the results of ensemble Monte Carlo simulations of the devices [3] a detailed explanation of the origin and frequency tunability of the oscillations will be presented.…”

Section: Introductionmentioning

confidence: 99%

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Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

2011

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By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic Γ valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, δ-doping, recess-to-drain distance and recess length on the frequency of the ultrafast Gunn-like oscillations. The simulations show that a minimum value for the δ-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases the oscillation frequency, so provides an interesting frequency tunability of this THz source.

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Section: Device Topology and Monte Carlo Approachmentioning

confidence: 96%

Section: Device Topology and Monte Carlo Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

2011

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“…The validity of the semiclassical MC model used for the simulation of VMTs has been proved for standard [16] and DG [5,6] HEMTs by reproducing their experimental static and dynamic behavior. This technique has been also successfully applied to the study of the static and dynamic behavior of a fabricated VMT [7,8].…”

Section: Physical Modelmentioning

confidence: 99%

“…In this work, an optimization of the geometry of recessed short-channel InAlAs/InGaAs VMTs is performed by means of an ensemble 2D Monte Carlo (MC) simulator self-consistently coupled with a 2D Poisson solver [16]. This model, which has provided a full microscopic interpretation of its dynamic performance [8], allows a geometrical optimization of VMTs in order to achieve optimal operation frequencies.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

et al. 2011

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The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/ discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.

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2022

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Monte Carlo simulator for the design optimization of low-noise HEMTs

Cited by 103 publications

References 23 publications

Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

Front‐End Readout Electronic Circuits for Quantum Cryogenic Detectors

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