Monte Carlo studies of low‐field electron transport in monolayer silicene and graphene

Abstract

Electron mobility and diffusion coefficients in monolayer silicene and graphene are calculated by Monte Carlo simulations using a simplified band structure with linear energy bands. Temperature evolution of the low-field mobility and diffusion coefficients is presented. Calculated characteristics of the low-field mobility in silicene exhibit a 1/T 3 dependence for nondegenerate electron gas conditions, which is attributed to dominant acoustic phonon scattering and to the linear band structure of the material. In degenerate conditions, a 1/T dependence is found in silicene. In graphene, there is no such simple power relation since optical and acoustic phonon scattering have comparable influences on electron transport. It is also found that electron-electron scattering only slightly modifies the low-field electron mobility in a degenerate electron gas.

Effects of carrier concentrations on the charge transport properties in monolayer silicene

“…Based on the Boltzmann transport equation in the momentum relaxation time approximation, Hu investigated the low-field charge transport in a silicene FETs by taking into consideration of screened charged impurity scattering [16]. Recently, Borowik et al presented the study of the electron mobility and diffusion coefficient using Monte Carlo method in a monolayer silicene [19,20].…”

Monte Carlo study of electron relaxation in graphene with spin polarized, degenerate electron gas in presence of electron-electron scattering

“…The expression of q  ( ), which has been used in numerous research [21,24,25,[27][28][29], has been obtained by Hwang and Das Sarma [51] in the form…”

“…Since, for the conditions considered in our studies, degeneracy plays an important role, the PEP is included in modeling using the approach from [21,27,57,58]. In the case of the linear band structure of graphene, the algorithm allowing one to implement e-e interactions has been proposed by Li et al [24] and has been used in several other works [2,13,16,25,[27][28][29]. Detailed description of the algorithm can be found in [27].…”

“…However, the proposed formulas of e-e scattering rates account for the exchange effect without considering the multi-valley nature of electron transport in graphene. Such a method has been used by several authors [2,13,16,21,[25][26][27][28][29]. It should be also noted that this approach is suitable for spatially homogeneous systems, as it is assumed here.…”