Moore’s Law Effect on Transistors Evolution

doi:10.7753/ijcatr0507.1014

Cited by 2 publications

(1 citation statement)

References 32 publications

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“…Physical realities are not the only constraints that can limit the exponential development of Moore's Law. The term "Moore's Second Law" refers to the economic limitations that could potentially impede progress at a faster rate than humanity's capacity to overcome the challenges posed by chemistry and physics [12]. The reason for this limitation is that the monetary cost of developing more complex electrical components increases at a similar rate to the exponential growth of the complexity itself.…”

Section: The Limit Of Moore's Lawmentioning

confidence: 99%

Moore's Law: The potential, limits, and breakthroughs

Zhu,

Xu,

Zong

2023

ACE

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Moore's Law is a concept that notes the doubling of the number of transistors on a microchip around every two years, resulting in exponential advancement in computing power and diminishing costs. However, as transistor sizes have approached the physical limits of silicon-based technology, maintaining this pace of growth has become increasingly challenging. As a result, researchers have been exploring alternative solutions, such as System-in-package(SiP), Chiplets, Non-volatile memory, Biocomputing, quantum computing, and photonics. While these technologies are still in the early stages of development, they offer promising solutions to the challenges facing the continued growth of computing power. As we continue to explore new avenues for technological advancement, we may find that Moore's Law continues to hold true in unexpected and exciting ways.

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Section: The Limit Of Moore's Lawmentioning

confidence: 99%

Moore's Law: The potential, limits, and breakthroughs

Zhu,

Xu,

Zong

2023

ACE

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Two-dimensional van der Waals ferroelectric field-effect transistors toward nonvolatile memory and neuromorphic computing

Lin,

Huang,

Zhang

et al. 2023

Applied Physics Letters

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With the gradual decline in Moore's law, traditional silicon-based technologies have encountered numerous challenges and limitations, prompting researchers to seek solutions. Two-dimensional (2D) van der Waals (vdWs) ferroelectric (Fe) field-effect transistors (FETs) (2D vdWs FeFETs) are devices that integrate emerging 2D vdWs ferroelectric materials into the transistor structures. In comparison with traditional complementary metal oxide semiconductor FETs (COMSFETs), they exhibit superior performance, including lower power consumption, higher switching speed, and improved stability. The vdWs FeFETs are anticipated to surpass the limits imposed by Moore's law, offering increased possibilities and opportunities for research and application in the field of nanoelectronics, particularly in nonvolatile memory (NVM) and neuromorphic computing (NMC). In this review, we summarize the recent research progress of vdWs FeFETs and elucidate their development origin, basic structure, and working mechanism. Furthermore, we explore the application of vdWs FeFETs in NVM, NMC, and large-scale arrays. Finally, we highlight the prominent challenges and future directions in this field.

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Moore’s Law Effect on Transistors Evolution

Cited by 2 publications

References 32 publications

Moore's Law: The potential, limits, and breakthroughs

Moore's Law: The potential, limits, and breakthroughs

Two-dimensional van der Waals ferroelectric field-effect transistors toward nonvolatile memory and neuromorphic computing

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