Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process

Mazón-Montijo, D.A.; Sotelo-Lerma, M.; Quevedo‐Lopez, Manuel; El-Bouanani, M.; Alshareef, Husam N.; Espinoza‐Beltrán, F.J.; Ramı́rez-Bon, R.

doi:10.1016/j.apsusc.2007.06.041

Cited by 25 publications

(15 citation statements)

References 19 publications

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“…3c͒. 37,36 No sulfur is detected for deposition times shorter than 2 min; therefore, in HfO 2 , 2 min of reaction is enough to grow CdS. Similarly, from CdS deposited on SiO 2 , no sulfur is observed for times shorter than 2 min ͑Fig.…”

Section: H313mentioning

confidence: 99%

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Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Salas-Villasenor

Mejía

Hovarth

et al. 2010

Electrochem. Solid-State Lett.

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Section: H313mentioning

confidence: 99%

“…3a͒, the Cd 3d feature is observed in depositions of as short as 0.5 min, and after 2 min of reaction, distinct peaks of Cd bonded to S are clearly observed. 37 However, for the CdS films deposited on SiO 2 , no Cd features are observed for times shorter than 2 min ͑Fig. 3b͒.…”

Section: H313mentioning

confidence: 99%

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Salas-Villasenor

Mejía

Hovarth

et al. 2010

Electrochem. Solid-State Lett.

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“…In this case the linear crystallite formations were observed at the early stages of the film formation. According to our report in Mazón-Montijo et al 25 these particles correspond to the growth stage when the first nuclei of Cd(OH) 2 are being transformed to CdS by cation exchange. Therefore, the particles are a mixture of Cd(OH) 2 and CdS which with deposition time evolve to a CdS layer as shown by the XRD pattern in Figure 1c.…”

Section: Methodsmentioning

confidence: 99%

“…99.999% purity CdTe powder from Cerac was utilized in the source. The CdS thin films were grown by the CBD technique at 70 °C, employing an ammonia-free process including CdCl 2 (0.05 M), Na 3 C 6 H 5 O 7 (0.5 M), KOH (0.5 M) and CS(NH 2 ) 2 (0.5 M), as the precursor reagents [23][24][25] . CdCO 3 thin film deposition was also done by the CBD technique, CdCO 3 is produced by employing the same bath employed to get CdS films, but at room temperature (RT).…”

Section: Methodsmentioning

confidence: 99%

Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

et al. 2013

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In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO 3 , and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO 3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

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“…In addition, in 2004 Ortuño-López et al reported another work [56] in which they succeeded in obtaining of CdS thin films using low concentrations of all the reagents, being able to use even the half of the concentrations used in the original ammonia-free citrate-containing formulation. Then, although with small variations in the concentrations of the reagents, this less-harmful formulation began to be widely used by research groups in Mexico and USA [4,[56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71], and in other countries [72][73][74]. their effects.…”

Section: Introductionmentioning

confidence: 99%

Detailed Analysis of Five Aspects Addressed to Minimize Costs and Waste in the Chemical Bath Deposition of CdS Films Using the CdB–AC6H5O7–AOH–(NH2)2CS System

García-Valenzuela¹,

Castelo-González²,

Baez-Gaxiola³

et al. 2013

MSA

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Five studies were conducted in order to produce less waste and economize the application of a CdCl 2 -Na 3 C 6 H 5 O 7 -KOH-H 3 BO 3 /NaOH/KCl-(NH 2 ) 2 CS definite aqueous system in the chemical bath deposition of CdS thin films, as well as to generate supporting information helpful to explain the effects of varying certain parameters established for the use of this formulation. These studies are related to the utility of the pH 10 borate buffer, to the selection of the appropriate OH -concentration, commercial alkali, and reaction temperature, and to the reusing of the residual solution. These studies were conducted by means of optical characterization, pH measurements, energy consumption tests, and chemical analysis; and all possible implications were analyzed in detail and widely supported by the literature. It is observed that the addition of 5.0 mL of pH 10 borate buffer in the reaction solutions only causes a slight reduction in the pH value and, therefore, in the thickness of the resulted films. It is observed that a decrease in CdCl 2 concentration causes an increase in the pH values, and when such reagent concentration is varied it is necessary to determine the pH value at which the best CdS films can be obtained; this indicates the existence of an optimum pH of deposition, depending on the used reagent concentrations. It is demonstrated that the use of KOH and NaOH is interchangeable, and the advantages of NaOH are evaluated in the context of hygroscopicity, CO 2 absorption, purity, and price. It is observed that the energy consumption when depositing a determined film is lower at high temperatures, and it is concluded that the time and energy savings at high temperatures are undoubtedly advantages in the deposition process of CdS thin films. A formulation to recycle the residual solution is presented, which is very important for the reducing of residual volume, and, therefore, in the minimizing of the environmental impact. An indirect objective of this work is to generate interest in identifying those points that could be modified in other chemical formulations to minimize costs and waste.

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Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process

Cited by 25 publications

References 19 publications

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

Detailed Analysis of Five Aspects Addressed to Minimize Costs and Waste in the Chemical Bath Deposition of CdS Films Using the Cd<i>B</i>–<i>A</i>C<sub>6</sub>H<sub>5</sub>O<sub>7</sub>–<i>A</i>OH–(NH<sub>2</sub>)<sub>2</sub>CS System

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