Morphological and crystalline structural characteristics of PEDOT™/TiO2 nanocomposites for applications towards technology in electronic devices

Negative series resistance and photo-response properties of Au/PPY-MWCNTs composite/TiO2/Al2O3/n-Si/Al photodiode

“…At temperature T=253 K, R s changes regularly with frequency and voltage taking positive and negative values of about (-5×10 4 to 55× 104 ) Ω. In Figure (c)-(e), at temperatures (273,293,323)K, Rs has the same performance with voltage and frequency and takes positive and negative values of (-25×10 4 to 375×10 3 , -35×10 4 to 3×10 5 , -2×10 5 to 45×10 4 )Ω respectively. As a result, R s is affected by differences in voltage and frequency, these performances display that the carriers have sufficient energy to leakage from the traps placed between the metal and semiconductor borders in the Si bandgap.…”

“…The conductance-voltage (G-V) and capacitance-voltage (C-V) characteristics are pivotal tools for exploring the electrical properties and conduction mechanisms of Metal-Semiconductors (MS), Metal-Oxide-Semiconductor MOS, Metal-Polymer-Semiconductor (MPS), and Metal-Insulator-Semiconductor (MIS), conducting polymers with multiwalled carbon nanotubes (MWCNTs) composites [1][2][3][4][5][6][7]. Due to the presence of an interfacial oxide layer, boundary states, and series resistance, nanotubes (MWCNTs) composites deposited on the oxide layer on silicon structures differ from those expected for their perfect case [8][9][10][11][12][13].…”