Morphological and Optoelectrical Characterization of Silicon Nanostructures for Photovoltaic Applications

Abstract

Metal (silver)-Assisted Chemical Etching (MACE) method is used to fabricate silicon nanostructures like silicon nanowires (SiNWs) and silicon nanocones (SiNCs). The morphological characterization of fabricated SiNWs has shown that 5 minutes is the optimal time of silver deposition on silicon substrate. Silicon nanocones (SiNCs) were also fabricated by etching vertical SiNWs with a AgN O 3 /HF/H 2 O 2 solution. The optical and electrical properties of SiNWs and SiNCs are analyzed and compared with those of the bulk silicon. The fabricated SiNWs (SiNCs) reduce the surface reflectance and the sheet resistance down to 6% (3%) and 9.143 Ω/sq (6.997 Ω/sq) respectively.

Integration of silicon nanostructures for health and energy applications using MACE: a cost-effective process

“…An advancement of photosensitivity was achieved by Abdulkhaleq et al [35] where n-type porous Si was synthesized through photoelectrochemical etching technique to yield a sponge like porous Si structure such that average pore size got enhanced with etching time as depicted by x-ray diffraction results. Silicon nanocones and SiNWs were successfully fabricated by vertical MAC-etching in AgNO 3 /HF/H 2 O 2 solution with obtained nanostructures having surface reflectance reduced down to 6% for SiNWs and 3% for Silicon Nanocones [36]. The suitability of the MAC-etch fabrication sequence has been well illustrated and reviewed by Huo et al [37] to discuss the extraction of black Si starting from its initial discovery to the latest evolution in photovoltaic industrial applications for magnificent light trapping ability.…”