Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Weyher, J.L.; Brown, Paul D.; Zauner, A.; Müller, Stefan; Boothroyd, Chris; Foord, D. T.; Hageman, P.R.; Humphreys, C. J.; Larsen, P.K.; Grzegory, I.; Porowski, S.

doi:10.1016/s0022-0248(99)00217-1

Cited by 88 publications

(59 citation statements)

References 37 publications

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“…3) is concerned, most likely it is a surface manifestation of an inversion domain (ID). The presence and the reason of formation of IDs in homoepitaxial N-polar GaN layer were demonstrated using crosssectional TEM and is discussed in [10].…”

Section: Resultsmentioning

confidence: 99%

Dislocation Structure of Growth Hillocks in Homoepitaxial GaN

Nowak¹,

Pakuła

Grzegory

et al. 1999

phys. stat. sol. (b)

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Section: Resultsmentioning

confidence: 99%

Dislocation Structure of Growth Hillocks in Homoepitaxial GaN

Nowak¹,

Pakuła

Grzegory

et al. 1999

phys. stat. sol. (b)

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“…6 Such hexagonal hillocks were also observed in homoepitaxial GaN layers grown on N-polar GaN bulk substrates by MOCVD. 7 Moreover, the growth on N-polar faces suffers from the significant incorporation of residual impurities such as oxygen, which leads to difficulties in controlling n-type and p-type conductivities. 8 Hence, few research groups have reported p-type doping in N-polar GaN with MOCVD.…”

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confidence: 99%

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

et al. 2017

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High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

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“…L. Weyher and co-workers (Weyher et al, 1999) studied morphological and structural characteristic of homoepitaxial GaN grown by metalorganic chemical vapor deposition. They found that GaN grown on N-polar surface of GaN substrate exhibits gross hexagonal pyramidal features.…”

Section: Inversion Domainmentioning

confidence: 99%

Gallium Nitride: An Overview of Structural Defects

Yam¹,

Low²,

Oh³

et al. 2011

Optoelectronics - Materials and Techniques

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Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Cited by 88 publications

References 37 publications

Dislocation Structure of Growth Hillocks in Homoepitaxial GaN

Dislocation Structure of Growth Hillocks in Homoepitaxial GaN

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Gallium Nitride: An Overview of Structural Defects

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